| DatasheetsPDF.com |
WFD2N60 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | WFD2N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | Wisdom Semiconductor
WFD/U2N60
N-Channe l MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5. 0 Ω )@VGS=10V Gate Ch arge (Typical 9. 5nC) Improved dv/dt Cap ability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Ra nge (150°C) Symbol ◀ { 2. Drain • 1. Gate { ▲ • • { 3. Sour ce General Description This Power MOSF ET is produced using Wisdom’s advance d planar stripe, DMOS technology. This latest technology has been especially d esigned to minimize on-state resistance , have a high rugged avalanche characte ristics. These devices are well suited for high efficiency switch mode power s . |
| Manufacture | Wisdom technologies |
| Datasheet |
| Part | WFD2N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | Wisdom Semiconductor
WFD/U2N60
N-Channe l MOSFET
Features
■ ■ ■ ■ ■
RDS(on) (Max 5. 0 Ω )@VGS=10V Gate Ch arge (Typical 9. 5nC) Improved dv/dt Cap ability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Ra nge (150°C) Symbol ◀ { 2. Drain • 1. Gate { ▲ • • { 3. Sour ce General Description This Power MOSF ET is produced using Wisdom’s advance d planar stripe, DMOS technology. This latest technology has been especially d esigned to minimize on-state resistance , have a high rugged avalanche characte ristics. These devices are well suited for high efficiency switch mode power s . |
| Manufacture | Wisdom technologies |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |