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Burst Architecture. CY7C1148V18 Datasheet

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Burst Architecture. CY7C1148V18 Datasheet






CY7C1148V18 Architecture. Datasheet pdf. Equivalent




CY7C1148V18 Architecture. Datasheet pdf. Equivalent





Part

CY7C1148V18

Description

(CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture

Manufacture

Cypress Semiconductor

Datasheet
Download CY7C1148V18 Datasheet


Cypress Semiconductor CY7C1148V18

CY7C1148V18; CY7C1146V18 CY7C1157V18 CY7C1148V18 CY7C 1150V18 18-Mbit DDR-II+ SRAM 2-Word Bu rst Architecture (2.0 Cycle Read Latenc y) Features ■ ■ ■ ■ ■ ■ Fu nctional Description The CY7C1146V18, C Y7C1157V18, CY7C1148V18, and CY7C1150V1 8 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II+ architecture. The DDR-II+ consists of an SRAM core with advanced synchronous periphera.


Cypress Semiconductor CY7C1148V18

l circuitry. Addresses for read and writ e are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the ris ing edges of K and K. Each address loca tion is associated with two 8-bit words (CY7C1146V18) or 9-bit words (CY7C1157 V18) or 18-bit words (CY7C1148V18) or 3 6-bit words (CY7C1.


Cypress Semiconductor CY7C1148V18

150V18) that burst sequentially into or out of the device. Asynchronous inputs include output impedance matching input (ZQ). Synchronous data outputs (Q, sha ring the same physical pins as the data inputs D) are tightly matched to the t wo output echo clocks CQ/CQ, eliminatin g the need for separately capturing dat a from each individual DDR SRAM in the system design. All.



Part

CY7C1148V18

Description

(CY7C11xxV18) 18-Mbit DDR-II SRAM 2-Word Burst Architecture

Manufacture

Cypress Semiconductor

Datasheet
Download CY7C1148V18 Datasheet




 CY7C1148V18
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
18-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.0 Cycle Read Latency)
Features
Functional Description
18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
300 MHz to 375 MHz clock for high bandwidth
2-Word burst for reducing address bus frequency
Double Data Rate (DDR) interfaces
(data transferred at 750 MHz) @ 375 MHz
Read latency of 2.0 clock cycles
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
Data valid pin (QVLD) to indicate valid data on the output
Synchronous internally self-timed writes
Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]
HSTL inputs and Variable drive HSTL output buffers
Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1-compatible test access port
Delay Lock Loop (DLL) for accurate data placement
Configurations
The CY7C1146V18, CY7C1157V18, CY7C1148V18, and
CY7C1150V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of K and K. Each address location is associated with two 8-bit
words (CY7C1146V18) or 9-bit words (CY7C1157V18) or 18-bit
words (CY7C1148V18) or 36-bit words (CY7C1150V18) that
burst sequentially into or out of the device.
Asynchronous inputs include output impedance matching input
(ZQ). Synchronous data outputs (Q, sharing the same physical
pins as the data inputs D) are tightly matched to the two output
echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
With Read Cycle Latency of 2.0 cycles:
CY7C1146V18 – 2M x 8
wwwC.DYa7taCS1h1e5e7t4VU1.c8om2M x 9
CY7C1148V18 – 1M x 18
CY7C1150V18 – 512K x 36
Selection Guide
Maximum Operating Frequency
Maximum Operating Current
375 MHz
375
1020
333 MHz
333
920
300 MHz
300
850
Unit
MHz
mA
Note
1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ
= 1.4V to VDD.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-06621 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised June 21, 2007





 CY7C1148V18
Logic Block Diagram (CY7C1146V18)
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
A(19:0) 20
LD
K
K
DOFF
Address
Register
CLK
Gen.
VREF
R/W
NWS[1:0]
Control
Logic
Write
Reg
Write
Reg
Read Data Reg.
16
8
8
Output
Logic
Control
R/W
Reg.
Reg.
Reg. 8
8
8
8
CQ
CQ
DQ[7:0]
QVLD
Logic Block Diagram (CY7C1157V18)
www.DataSheet4U.com
A(19:0) 20
LD
K
K
DOFF
Address
Register
CLK
Gen.
VREF
R/W
BWS[0]
Control
Logic
Write
Reg
Write
Reg
Read Data Reg.
18
9
9
Output
Logic
Control
R/W
Reg.
Reg.
Reg. 9
9
9
9
CQ
CQ
DQ[8:0]
QVLD
Document Number: 001-06621 Rev. *C
Page 2 of 27





 CY7C1148V18
Logic Block Diagram (CY7C1148V18)
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
A(18:0) 19
LD
K
K
DOFF
Address
Register
CLK
Gen.
VREF
R/W
BWS[1:0]
Control
Logic
Write
Reg
Write
Reg
Read Data Reg.
36
18
18
Output
Logic
Control
18
R/W
Reg.
Reg.
Reg. 18
18
18
CQ
CQ
DQ[17:0]
QVLD
Logic Block Diagram (CY7C1150V18)
www.DataSheet4U.com
A(17:0) 18
LD
K
K
DOFF
Address
Register
CLK
Gen.
VREF
R/W
BWS[3:0]
Control
Logic
Write
Reg
Write
Reg
Read Data Reg.
72
36
36
Output
Logic
Control
36
R/W
Reg.
Reg.
Reg. 36
36
36
CQ
CQ
DQ[35:0]
QVLD
Document Number: 001-06621 Rev. *C
Page 3 of 27



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