S4402

PHOTODIODE Si APD S4402 φ1 mm quadrant APD Features Quadrant format on one chip with φ1 mm active area ensures uniform characteristics between elements. l Single power supply operation Allows easy and simple operation. Applications l Uniform element characteristics l Low-light-level detection l Laser beam positioning s General ratings Parameter Window material Active area size Effective active area Symbol A Symbol Topr Tstg Value Borosilicate glass φ1 mm/4 0.17 (per 1 element) Value -20 to +60 -55 to +100 Unit mm mm2 Unit °C °C s Absolute maximum ratings Parameter Operating temperature www.DataSheet4U.com Storage temperature s Electrical and optical characteristics (Ta=25 °C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Quantum efficiency Breakdown voltage Temperature coefficient of VBR Dark current Cut-off frequency Terminal capacitance Excess noise figure Symbol λ λp S QE VBR ID fc Ct x Condition M=100 λ=800 nm, M=1 λ=800 nm, M=1 IR=100 µA M=100 M=100, λ=800 nm RL=50 Ω, -3 dB M=100, f=1 MHz M=50, f=10 kHz Io=10 nA Min. - Typ. 400 to 1000 800 0.5 75 150 0.65 0.4 310 8 0.35 Max. 200 2.0 - Unit nm nm A/W % V V/°C nA MHz pF - Si APD s Spectral response 0.7 0.6 (Typ. Ta=25 ˚C) S4402 s Dark current vs. reverse voltage 100 nA (Typ. Ta=25 ˚C) PHOTO SENSITIVITY (A/W) 0.4 0.3 0.2 0.1 0 200 DARK CURRENT 400 600 800 1000 0.5 10 nA 1 nA 100 pA 10 pA 0 50 100 150 200 WAVELENGTH (nm) KAPDB0046EA REVERSE VOLTAGE (V) KAPDB00...