PH4330L

PH4330L N-channel TrenchMOS logic level FET Rev. 01 — 22 October 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits „ 100 % gate resistance tested „ 100 % ruggedness tested „ Lead-free package „ Logic level threshold „ Optimized for use in DC-DC converters „ Very low switching and conduction losses 1.3 Applications „ DC-to-DC convertors „ PC motherboards „ Switched-mode power supplies „ Voltage regulators 1.4 Quick reference data Table 1. VDS ID www.DataSheet4U.com Quick reference Conditions Tmb = 25 °C; VGS = 10 V; see Figure 1; see Figure 3 VGS = 4.5 V; ID = 25 A; VDS = 12 V; see Figure 11; see Figure 12 VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max 30 95.9 Unit V A drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C drain current Symbol Parameter Dynamic characteristics QGD gate-drain charge 5.4 nC Static characteristics RDSon drain-source on-state resistance 3.6 4.3 mΩ NXP Semiconductors PH4330L N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pin 1, 2, 3 4 mb S G D Pinning information Symbol Description source gate mounting base; connected to drain 1 2 3 4 mb D Simplified outline Graphic symbol G mbb076 S SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description PH4330L LFPAK plastic single-ended surface-mount...