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AMIS-720442-A Dataheets PDF



Part Number AMIS-720442-A
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description Image Sensor
Datasheet AMIS-720442-A DatasheetAMIS-720442-A Datasheet (PDF)

AMIS-720442-A: 400dpi Contact Image Sensor Data Sheet 1.0 Description AMI Semiconductor’s AMIS-720442-A (PI3042A) contact image sensor (CIS) is a 400 dots per inch (dpi) linear array image sensor chip. The sensor chip is processed using a CMOS image sensing technology, belonging to AMIS. Designed for cascading multiple chips in a series, the image sensor chips, using chip-on-board process, are bonded end-to-end on a printed circuit board (PCB). This bonding process allows the manufacturers to .

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AMIS-720442-A: 400dpi Contact Image Sensor Data Sheet 1.0 Description AMI Semiconductor’s AMIS-720442-A (PI3042A) contact image sensor (CIS) is a 400 dots per inch (dpi) linear array image sensor chip. The sensor chip is processed using a CMOS image sensing technology, belonging to AMIS. Designed for cascading multiple chips in a series, the image sensor chips, using chip-on-board process, are bonded end-to-end on a printed circuit board (PCB). This bonding process allows the manufacturers to produce variable CIS module lengths in increments of chip array lengths. This allows a wide variety of image reading widths which are easily applied to the numerous document scanners found in facsimile, as well as the narrow width scanners, such as, those found in check reader, lotto tickets, entrance gates tickets, etc. Included in this list of scanners are various types of automated office equipment which require a wide variety of scanning widths. Figure 1 is a block diagram of the imaging sensor chip. Each sensor chip consists of 128 detector elements, their associated multiplexing switches, buffers and a chip selector. The detector's element-to-element spacing is approximately 62.5µm. The size of each chip without scribe lines is 8080µm by 385µm. Each sensor chip has seven bonding pads. The pad symbols and functions are described in Table 1. 8080 m Row of 128 Sensors and Video Signal Multiplexers Readout Shift Register 385 m Buffer SP Buffer CP VDD DGND Chip Select IOUT Buffer AGND EOS Figure 1: AMIS-720442-A Block Diagram www.DataSheet4U.com Table 1: Pad Symbols and Functions Symbol Function SP Start pulse: input clock to start the line scan CP Clock pulse: input clock to clock of the shift register VDD Positive supply: +5V supply connected to substrate DGND Digital ground: connection topside common IOUT Signal current output: output for video signal current AGND Analog ground: connection topside common EOS End-of-scan pulse: output from the shift register at end-of-scan AMI Semiconductor – May 06, M-20571-001 www.amis.com 1 AMIS-720442-A: 400dpi Contact Image Sensor 2.0 Bonding Pad Output Locations and Die Dimensions Data Sheet Figure 2 shows the die dimensions of the image sensor and the bonding pad locations for the AMIS-720442-A sensor chip. The location is referenced to the lower left corner of the die. www.DataSheet4U.com Figure 2: Bonding Pad and Chip Layout AMI Semiconductor – May 06, M-20571-001 www.amis.com 2 AMIS-720442-A: 400dpi Contact Image Sensor 3.0 Wafer Scribe Lines Bordering the Die Figure 3 shows the wafer scribe lines bordering the AMIS-720442-A sensor chip. The wafer thickness is 350µcrons. Data Sheet www.DataSheet4U.com Figure 3: Wafer Scribe Lines AMI Semiconductor – May 06, M-20571-001 www.amis.com 3 AMIS-720442-A: 400dpi Contact Image Sensor 4.0 Output Circuit of the Image Sensor Data Sheet The video signal from each photo-site is connected to a common video line on the sensor. Each photo-site is composed of a phototransistor with a series MOS switch connecting its emitter to a common video line. The video line is connected to the pad labeled IOUT. The photo-sites are read out upon the closure of the MOS switch, which is sequentially switched on and off by its internal scanning shift register. See Figure 1. For the clock and timing operation image sensor see Figure 11. The photo-sensing element is the base of the phototransistor where it detects and converts the light energy to proportional charges and stores them in its base and collector capacitance. When the MOS switch is activated, the emitter is connected to the video line and acts as the source follower, producing an impulse current proportional to the stored charges in the base. This current is a discrete-time analog signal output called the video pixel. The charges in the video pixel are proportional to the light energy impinging in the neighborhood of its photo-sites. Figure 4 shows an output structure of four photo-sites out of 128. The multiplexing MOS switch in each photo-site terminates into the output pad, IOUT, through a common video line. As the shift register sequentially accesses each photo-site the charges of the video pixel are sent to the IOUT where they are processed with an external signal conversion circuit (see Section 5.0). Figure 4: Video Pixel Output Structures www.DataSheet4U.com AMI Semiconductor – May 06, M-20571-001 www.amis.com 4 AMIS-720442-A: 400dpi Contact Image Sensor 5.0 Signal Conversion Circuit Data Sheet Figure 5 is an example of the charge conversion that is used in the CIS modules. It is usually bonded on the same PCB on which the image sensors are bonded. In applications where cost is an important factor, this simple circuit provides the cleanest technique in processing the video output. It integrates all the currents from each pixel element onto a capacitor, CAP. It also sums the energy of the switch edge along with the signal current pulses, minimizing the s.


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