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AMIS-732512 Dataheets PDF



Part Number AMIS-732512
Manufacturers AMI SEMICONDUCTOR
Logo AMI SEMICONDUCTOR
Description Wide Aperture Spectroscopic Photodiode Arrays
Datasheet AMIS-732512 DatasheetAMIS-732512 Datasheet (PDF)

AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array.

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AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 1.0 Description AMI Semiconductor’s WSN series is a family of self-scanning photodiode solid-state linear imaging arrays. These photodiode sensors employ AMI Semiconductor’s proprietary CMOS image sensing technology to integrate the sensors into a single monolithic chip. These sensors are optimally designed for applications in spectroscopy. Accordingly, these sensors contain a linear array of photodiodes with an optimized geometrical aspect ratio (50µm aperture pitch x 2500µm aperture width) for helping to maintain mechanical stability in spectroscopic instruments and for providing a large light-capturing ability. The family of sensors consists of photodiode arrays of various lengths - 128, 256 and 512 pixels. The WSN photodiode arrays are mounted in 22-pin ceramic side-brazed dual-in-line packages that fit in standard DIP sockets. A diagram of its pin out configuration is seen in Figure 1. www.DataSheet4U.com Figure 1: Pin Out Configuration 2.0 Features • • • • • • • • • • 65pC saturation capacity for wide dynamic range Wide spectral response (180 – 1000nm) for UV and IR response NP junction photodiodes with superior resistance to UV damage Low dark current Integration time up to nine seconds at room temperature Integration time extended to hours by cooling High linearity Low power dissipation (less than 1mW) Geometrical structure for enhanced stability and registration Standard 22 lead dual-in-line IC package AMI Semiconductor – Dec. 05, M-20491-001 www.amis.com 1 AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 3.0 Sensor Characteristics AMI Semiconductor’s self-scanned WSN photodiodes are spaced on a 50µm pitch. The line density is 20 diodes/mm and accordingly the overall die lengths of the different arrays vary with the number of photodiodes. For example, the 128 pixel array is 6.4mm long, the 256 pixel array is 12.8mm long and the 512 pixel array is 25.6mm long. Each array has four additional dummy photodiodes. On each side, there is one dark (non-imaging) dummy photodiode and one imaging dummy photodiode. The height of the sensors is 2500µm. The tall, narrow apertures make these sensors desirable for use in monochromators and spectrographs. Figure 2: Geometry and Layout of Photodiode Pixels www.DataSheet4U.com During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the stored signal charge as function of light exposure at a wavelength of 575nm. The exposure is the product of the light intensity in 2 nW/cm and integration time in seconds. The charge accumulates linearly until reaching the saturation charge, and the corresponding exposure is the saturation exposure. The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a -4 2 photodiode is 3.5×10 C/J/cm at 575nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength. AMI Semiconductor – Dec. 05, M-20491-001 www.amis.com 2 AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 80 Output Charge (pC) 70 60 50 40 30 20 10 0 0 50 100 150 200 250 Saturation Charge Saturation Exposure Exposure (nJ/cm 2) Figure 3: Stored Signal Charge as a Function of Exposure at a Wavelength of 575nm 5.0E-04 Responsivity (C/J/cm 2) 4.5E-04 4.0E-04 3.5E-04 3.0E-04 2.5E-04 2.0E-04 1.5E-04 1.0E-04 5.0E-05 0.0E+00 100 QE=80% QE=60% QE=40% QE=20% www.DataSheet4U.com 300 500 700 900 Wavelength (nm) Figure 4: Predicted Spectral Response Note: Quantum efficiency (QE) can be calculated by dividing the responsivity by the area of the sensor's element and multiplying the resulting ratio by the energy per photon in electron volts (eV). The dark current is typically 0.2pA at 25°C and varies as function of temperature. The dark current will contribute dark-signal charges and these charges will increase linearly with integration time. The dark signal and the photo generated signal combined result in the total signal charge. AMI Semiconductor – Dec. 05, M-20491-001 www.amis.com 3 AMIS-732128, AMIS-732256, AMIS-732512 50µm-pitch Wide Aperture Spectroscopic Photodiode Arrays Data Sheet 4.0 Self-Scanning Circuit Figure 5 shows a simplified electrically equivalent circuit diagram of the photodiode array. An MOS read switch connects every photodiode in the array to a common output video line. Incident photons generate electron charge that is collected on each imaging photodiode while the switch is open. The shift register is activated by the start pulse. A pulse propagates through each shift register stage and activates the MOS read .


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