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MP04TT1550 Dataheets PDF



Part Number MP04TT1550
Manufacturers Dynex Semiconductor
Logo Dynex Semiconductor
Description Dual Thyristor Water Cooled Welding Module Preliminary Information
Datasheet MP04TT1550 DatasheetMP04TT1550 Datasheet (PDF)

MP04TT1550 MP04TT1550 Dual Thyristor Water Cooled Welding Module Preliminary Information DS5467-1.1 June 2001 FEATURES s s s s s s Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM ILINE(cont.) ILINE(20cy./50%) ITSM(per arm) Visol 1800V 1438A 1670A 14000A 3000V 5 (G1) 4 (K1) 3 (A) 1 (AK) 2 (A) APPLICATIONS s 6 (G2) 7 (K2) Welding Fig. 1.

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MP04TT1550 MP04TT1550 Dual Thyristor Water Cooled Welding Module Preliminary Information DS5467-1.1 June 2001 FEATURES s s s s s s Dual Device Module Electrically Isolated Package Pressure Contact Construction International Standard Footprint Alumina (Non Toxic) Isolation Medium Integral Water Cooled Heatsink KEY PARAMETERS VDRM ILINE(cont.) ILINE(20cy./50%) ITSM(per arm) Visol 1800V 1438A 1670A 14000A 3000V 5 (G1) 4 (K1) 3 (A) 1 (AK) 2 (A) APPLICATIONS s 6 (G2) 7 (K2) Welding Fig. 1 TT Circuit diagram VOLTAGE RATINGS Type Number Repetitive Peak Voltages VDRM VRRM V 1800 1700 1600 1500 Conditions MP04TT1550-18 MP04TT1550-17 MP04TT1550-16 MP04TT1550-15 Tvj = 0˚ to 125˚C, IDRM = IRRM = 50mA VDSM = VRSM = VDRM = VRRM + 100V respectively www.DataSheet4U.com Lower voltage grades available Module outline type code: MP04-W3 Module outline type code: MP04-W3A ORDERING INFORMATION Order As: MP04TT1550-XX-W2 MP04TT1550-XX-W3 MP04TT1550-XX-W3A 1/4 - 18 NPT connection 1/4 - 18 NPT connection 1/4 - 18 NPT water connection thread XX shown in the part number about represents VDRM/100 selection required, eg. MP04TT1550-17-W2 Note: When ordering, please use the complete part number. Module outline type code: MP04-W2 (See Package Details for further information) Fig. 2 Module package variants - (not to scale) 1/10 www.dynexsemi.com MP04TT1550 ABSOLUTE MAXIMUM CURRENT RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol ILINE Parameter Max. controllable RMS line current - single phase Continuous 50/60Hz 4.5 Ltr/min 20 cycles, 50% duty cycle 4.5 Ltr/min ITSM I2t ITSM I2t Visol Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Isolation voltage Test Conditions Twater (in) = 25˚C Twater (in) = 40˚C Twater (in) = 25˚C Twater (in) = 40˚C 10ms half sine, Tj = 125˚C VR = 0 10ms half sine, Tj = 125˚C VR = 50% VDRM Commoned terminals to base plate. AC RMS, 1 min, 50Hz Max. 1438 1280 1860 1670 14 0.975X106 11.2 0.625X106 3000 Units A A A A kA A2s kA A2s V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-W) Parameter Thermal resistance - junction to water (per thyristor) Test Conditions dc, 4.5 Ltr/min Half wave, 4.5 Ltr/min 3 Phase, 4.5 Ltr/min Tvj Tstg Virtual junction temperature Storage temperature range Screw torque Mounting - M6 Electrical connections - M10 Weight (nominal) Reverse (blocking) Min. –40 6(53) Max. 0.102 0.106 0.112 125 125 Units ˚C/kW ˚C/kW ˚C/kW ˚C ˚C Nm (lb.ins) www.DataSheet4U.com 12(106) Nm (lb.ins) Refer to drawings g 2/10 www.dynexsemi.com MP04TT1550 DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM dV/dt dI/dt Parameter Peak reverse and off-state current Linear rate of rise of off-state voltage Rate of rise of on-state current Test Conditions At VRRM/VDRM, Tj = 125˚C To 67% VDRM, Tj = 125˚C From 67% VDRM to 500A, gate source 10V, 5Ω tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage On-state slope resistance At Tvj = 125˚C At Tvj = 125˚C 0.85 0.38 V mΩ Min. Max. 50 1000 500 Units mA V/µs A/µs Note: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol VGT IGT VGD VFGM Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak forward gate voltage Test Conditions VDRM = 5V, Tcase = 25oC VDRM = 5V, Tcase = 25oC At VDRM Tcase = 125oC Anode positive with respect to cathode Anode negative with respect to cathode Anode positive with respect to cathode See table fig. 5 Max. 3.5 200 0.25 30 0.25 5 10 150 10 Units V mA V V V V A W W Peak forward gate voltage VFGN www.DataSheet4U.com VRGM IFGM PGM PG(AV) Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power 3/10 www.dynexsemi.com MP04TT1550 2500 25 Peak half sine wave on-state current - (kA) Measured under pulse conditions 1 2 1: Tj = 125˚C Min 2: Tj = 125˚C Max I2t = Î2 x t 2 20 Instantaneous on-state current IT - (A) 2000 700 15 I2t value - (A2s x 103) 1500 1000 10 I2t 5 600 500 500 0 0.5 1.0 1.5 2.0 Instantaneous on-state voltage VT - (V) 2.5 0 1 ms 10 1 2 3 45 10 400 20 30 50 Cycles at 50Hz Duration Fig. 3 Maximum (limit) on-state characteristics Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 125˚C) 0.12 Thermal resistance, Junction to water, Rth(j-w) - (°C/W) 100 Pulse width Frequency Hz Table gives pulse power PGM in Watts µs 50 100 400 100 150 150 150 200 150 150 125.


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