IGBT-Die
VCE IC
= =
1200 V 75 A
IGBT-Die
5SMX 12K1273
Die size: 11.0 x 11.0 mm
Doc. No. 5SYA 1633-00 June 05
• • • • •
Low...
Description
VCE IC
= =
1200 V 75 A
IGBT-Die
5SMX 12K1273
Die size: 11.0 x 11.0 mm
Doc. No. 5SYA 1633-00 June 05
Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
Maximum rated values
Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA
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1)
1)
Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C
min
max 1200 75 150
Unit V A A V µs °C
-20
20 10
Junction temperature
-40
150
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SMX 12K1273
IGBT characteristic values
Parameter Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time
2)
Symbol Conditions V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 600 V, IC = 75 A, RG = 10 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load VCC = 600 ...
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