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5SMX12K1273 Datasheet, Equivalent, IGBT-Die.IGBT-Die IGBT-Die |
| Part | 5SMX12K1273 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
1200 V 75 A
IGBT-Die
5SMX 12K1273
Die size: 11. 0 x 11. 0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technolog y Smooth switching for good EMC Minimiz ed gate charge, short delay times Optim ized for paralleling Large bondable emi tter area Maximum rated values Paramet er Collector-emitter voltage DC collect or current Peak collector current Gate- emitter voltage IGBT short circuit SOA www. DataSheet4U. com 1) 1) Symbol Cond itions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tv j ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 . |
| Manufacture | ABB |
| Datasheet |
| Part | 5SMX12K1273 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
1200 V 75 A
IGBT-Die
5SMX 12K1273
Die size: 11. 0 x 11. 0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technolog y Smooth switching for good EMC Minimiz ed gate charge, short delay times Optim ized for paralleling Large bondable emi tter area Maximum rated values Paramet er Collector-emitter voltage DC collect or current Peak collector current Gate- emitter voltage IGBT short circuit SOA www. DataSheet4U. com 1) 1) Symbol Cond itions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, Tv j ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 . |
| Manufacture | ABB |
| Datasheet |
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