IGBT-Die
9&( ,&
9 $
,*%7'LH
60; .
'LH VL]H [ PP
Doc. No. 5SYA1619-01 July 03
• /RZ ORVV WKLQ ,*%7 ...
Description
9&( ,&
9 $
,*%7'LH
60; .
'LH VL]H [ PP
Doc. No. 5SYA1619-01 July 03
/RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD
0D[LPXP UDWHG YDOXHV
3DUDPHWHU Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature www.DataSheet4U.com 6\PERO &RQGLWLRQV VCES IC ICM VGES tpsc Tvj VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C -40 Limited by Tvjmax -20 VGE = 0 V, Tvj ≥ 25 °C PLQ PD[ 1700 75 150 20 10 150 8QLW V A A V µs °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
$%% 6ZLW]HUODQG /WG 6HPLFRQGXFWRUV UHVHUYHV WKH ULJKW WR FKDQJH VSHFLILFDWLRQV ZLWKRXW QRWLFH
60; .
,*%7 FKDUDFWHULVWLF YDOXHV
3DUDPHWHU Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 6\PERO &RQGLWLRQV V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, RG = 15 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 75 A, VGE = ±15 V, RG = 15 Ω, Lσ = 160 nH, inductive load, FWD: 5SLX12G1700 VCC = 900 V, IC = 75 A, VGE = ±15 V, RG =...
Similar Datasheet