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5SMX12L1273 Datasheet, Equivalent, IGBT-Die.IGBT-Die IGBT-Die |
| Part | 5SMX12L1273 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
1200 V 100 A
IGBT-Die
5SM X 12L1273
Die size: 12. 6 x 12. 6 mm Doc . No. 5SYA 1634-00 June 05 • • • • • Low loss, rugged SPT technolo gy Smooth switching for good EMC Minimi zed gate charge, short delay times Opti mized for paralleling Large bondable em itter area Maximum rated values Parame ter Collector-emitter voltage DC collec tor current Peak collector current Gate -emitter voltage IGBT short circuit SOA www. DataSheet4U. com 1) 1) Symbol Con ditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, T vj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 . |
| Manufacture | ABB |
| Datasheet |
| Part | 5SMX12L1273 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
1200 V 100 A
IGBT-Die
5SM X 12L1273
Die size: 12. 6 x 12. 6 mm Doc . No. 5SYA 1634-00 June 05 • • • • • Low loss, rugged SPT technolo gy Smooth switching for good EMC Minimi zed gate charge, short delay times Opti mized for paralleling Large bondable em itter area Maximum rated values Parame ter Collector-emitter voltage DC collec tor current Peak collector current Gate -emitter voltage IGBT short circuit SOA www. DataSheet4U. com 1) 1) Symbol Con ditions VCES IC ICM VGES tpsc Tvj VCC = 900 V, VCEM ≤ 1200 V VGE ≤ 15 V, T vj ≤ 125 °C Limited by Tvjmax VGE = 0 V, Tvj ≥ 25 °C min max 1200 . |
| Manufacture | ABB |
| Datasheet |
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