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5SMX12L2511 Datasheet, Equivalent, IGBT-Die.IGBT-Die IGBT-Die |
　
　
　
| Part | 5SMX12L2511 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
2500 V 54 A
IGBT-Die
5SMX 12L2511
Die size: 12. 4 x 12. 4 mm Doc. No. 5SYA1640-00 Mar 07 • • • †¢ Low loss, rugged SPT technology Smoo th switching for good EMC Emitter metal lisation optimized for press-pack packa ging Passivation: SIPOS and Silicon Nit ride Maximum rated values Parameter Co llector-emitter voltage DC collector cu rrent Peak collector current Gate-emitt er voltage IGBT short circuit SOA Junct ion temperature www. DataSheet4U. com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max . |
| Manufacture | ABB |
| Datasheet |
| Part | 5SMX12L2511 |
|---|---|
| Description | IGBT-Die |
| Feature | VCE IC
= =
2500 V 54 A
IGBT-Die
5SMX 12L2511
Die size: 12. 4 x 12. 4 mm Doc. No. 5SYA1640-00 Mar 07 • • • †¢ Low loss, rugged SPT technology Smoo th switching for good EMC Emitter metal lisation optimized for press-pack packa ging Passivation: SIPOS and Silicon Nit ride Maximum rated values Parameter Co llector-emitter voltage DC collector cu rrent Peak collector current Gate-emitt er voltage IGBT short circuit SOA Junct ion temperature www. DataSheet4U. com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max . |
| Manufacture | ABB |
| Datasheet |
　
　
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