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5SMX12L2511 Datasheet, Equivalent, IGBT-Die.

IGBT-Die

IGBT-Die

 

 

 

Part 5SMX12L2511
Description IGBT-Die
Feature VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.
4 x 12.
4 mm Doc.
No.
5SYA1640-00 Mar 07


• Low loss, rugged SPT technology Smoo th switching for good EMC Emitter metal lisation optimized for press-pack packa ging Passivation: SIPOS and Silicon Nit ride Maximum rated values Parameter Co llector-emitter voltage DC collector cu rrent Peak collector current Gate-emitt er voltage IGBT short circuit SOA Junct ion temperature www.
DataSheet4U.
com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max .
Manufacture ABB
Datasheet
Download 5SMX12L2511 Datasheet
Part 5SMX12L2511
Description IGBT-Die
Feature VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.
4 x 12.
4 mm Doc.
No.
5SYA1640-00 Mar 07


• Low loss, rugged SPT technology Smoo th switching for good EMC Emitter metal lisation optimized for press-pack packa ging Passivation: SIPOS and Silicon Nit ride Maximum rated values Parameter Co llector-emitter voltage DC collector cu rrent Peak collector current Gate-emitt er voltage IGBT short circuit SOA Junct ion temperature www.
DataSheet4U.
com 1) 1) Symbol Conditions VCES IC ICM VGES tpsc Tvj VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Limited by Tvjmax VGE = 0 V min max .
Manufacture ABB
Datasheet
Download 5SMX12L2511 Datasheet

5SMX12L2511

5SMX12L2511
5SMX12L2511

5SMX12L2511

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