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Doc. No. 5SYA1620-01 July 03
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3DUDPHWHU Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage IGBT short circuit SOA Junction temperature www.DataSheet4U.com 6\PERO &RQGLWLRQV VCES IC ICM VGES tpsc Tvj VCC = 1300 V, VCEM ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C -40 Limited by Tvjmax -20 VGE = 0 V, Tvj ≥ 25 °C PLQ PD[ 1700 100 200 20 10 150 8QLW V A A V µs °C
1) Maximum rated values indicate limits beyond which damage to the device may occur
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3DUDPHWHU Collector (-emitter) breakdown voltage Collector-emitter saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Internal gate resistance Turn-on delay time Rise time Turn-off delay time Fall time 6\PERO &RQGLWLRQV V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres RGint td(on) tr td(off) tf VCC = 900 V, IC = 100 A, RG = 10 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 100 A, RG = 10 Ω, VGE = ±15 V, Lσ = 160 nH, inductive load VCC = 900 V, IC = 100 A, VGE = ±15 V, RG = 10 Ω, Lσ = 160 nH, inductive load, FWD: 5SLX12H1700 VCC = 900 V, IC = 100 A, VGE = ±15 V, RG = 10 Ω, Lσ = 160 nH, inductive load Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 100 A, VGE = 15 V VCE = 1700 V, VGE = 0 V Tvj = 25 °C Tvj = 125 °C Tvj = 25 °C Tvj = 125 °C -500 4.5 880 9.5 0.64 0.40 4 160 170 100 110 400 480 90 110 22 mJ 32 17 mJ 27 470 A Ω ns ns ns ns nF 800 500 6.5 PLQ 1700 2.1 2.3 2.6 100 2.7 W\S PD[ 8QLW V V V µA µA nA V nC
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C IC = 4 mA, VCE = VGE, Tvj = 25 °C IC = 100 A, VCE = 900 V, VGE = -15 ..15 V
Turn-on switching energy
Eon
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Turn-off switching energy
Eoff
Short circuit current
ISC
tpsc V 9GE = 15 V, Tvj = 125 °C, VCC = 1300 V, VCEM 9
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Doc. No. 5SYA1620-01 July 03 page 2 of 5
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3DUDPHWHU Overall die L W
x
8QLW 13.6 13.6
x
mm mm mm µm µm µm
Dimensions
exposed L x W (except gate pad) front metal gate pad thickness front back LxW
11.6 x 11.6 1.2 x 1.2 210 ± 15
Metallization
1)
AISi1 AI / Ti / Ni / Ag
4 1.2
1) For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA2033-01 April 02.
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Emitter
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