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29LV160TE90TN Datasheet, Equivalent, MBM29LV160TE90TN.MBM29LV160TE90TN MBM29LV160TE90TN |
| Part | 29LV160TE90TN |
|---|---|
| Description | MBM29LV160TE90TN |
| Feature | FUJITSU SEMICONDUCTOR DATA SHEET
DS05-2 0883-2E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29LV160TE/BE -70/90/ 12
s GENERAL DESCRIPTION
The MBM29LV160 TE/BE is a 16M-bit, 3. 0 V-only Flash me mory organized as 2M bytes of 8 bits ea ch or 1M words of 16 bits each. The MBM 29LV160TE/BE is offered in a 48-pin TSO P (I), 48-pin CSOP and 48-ball FBGA pac kages. The device is designed to be pro grammed in-system with the standard sys tem 3. 0 V VCC supply. 12. 0 V VPP and 5. 0 V VCC are not required for write or e rase operations. The device can also be reprogrammed in standard EPROM program mers. The standa . |
| Manufacture | Fujitsu Media Devices |
| Datasheet |
| Part | 29LV160TE90TN |
|---|---|
| Description | MBM29LV160TE90TN |
| Feature | FUJITSU SEMICONDUCTOR DATA SHEET
DS05-2 0883-2E
FLASH MEMORY
CMOS
16M (2M × 8/1M × 16) BIT
MBM29LV160TE/BE -70/90/ 12
s GENERAL DESCRIPTION
The MBM29LV160 TE/BE is a 16M-bit, 3. 0 V-only Flash me mory organized as 2M bytes of 8 bits ea ch or 1M words of 16 bits each. The MBM 29LV160TE/BE is offered in a 48-pin TSO P (I), 48-pin CSOP and 48-ball FBGA pac kages. The device is designed to be pro grammed in-system with the standard sys tem 3. 0 V VCC supply. 12. 0 V VPP and 5. 0 V VCC are not required for write or e rase operations. The device can also be reprogrammed in standard EPROM program mers. The standa . |
| Manufacture | Fujitsu Media Devices |
| Datasheet |
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