IXFN55N50F. 55N50F Datasheet

55N50F IXFN55N50F. Datasheet pdf. Equivalent


Part 55N50F
Description IXFN55N50F
Feature HiPerRFTM IXFN 55N50F Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avala.
Manufacture IXYS Corporation
Datasheet
Download 55N50F Datasheet


HiPerRFTM IXFN 55N50F Power MOSFETs F-Class: MegaHertz Swi 55N50F Datasheet
Recommendation Recommendation Datasheet 55N50F Datasheet




55N50F
HiPerRFTM
IXFN 55N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
Test Conditions
D
G
SS
Maximum Ratings
V
DSS
V
DGR
VGS
VGSM
I
D25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
T
C
=
25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
T
C
=
25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
500 V
500 V
±20 V
±30 V
55 A
220 A
55 A
60 mJ
3.0 J
10 V/ns
600
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
TJ
VISOL
Md
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque
Terminal connection torque
- °C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30 g
Symbol
V
DSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 1 mA
GS D
BVDSS Temperature Dependence
VDS = VGS, ID = 8 mA
V Temperature Dependence
GS(th)
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs, duty cycle d 2 %
500
0.53
3.0
-0.011
V
V/K
5.5 V
V/K
±200 nA
100 µA
3 mA
85 m
V=
DSS
ID25 =
=RDS(on)
500 V
55 A
85 m
trr 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z RF capable Mosfets
z Rugged polysilicon gate cell structure
z Double metal process for low gate
resistance
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z Fast intrinsicrectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z Pulsegeneration
z Laser drivers
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS98854A(01/03)



55N50F
IXFN 55N50F
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG(on)
QGS
QGD
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
22
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External),
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
33 S
6700
1250
330
pF
pF
pF
24 ns
20 ns
45 ns
9.6 ns
195 nC
50 nC
95 nC
0.21 K/W
0.05 K/W
Source-Drain Diode
Symbol
IS
Test Conditions
VGS = 0 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
55 A
ISM Repetitive;
pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = 25A, -di/dt = 100 A/µs, VR = 100 V
QRM
IRM
220 A
1.5 V
250 ns
1.0 µC
10 A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50
7.80
31.88
8.20
4.09
4.09
4.29
4.29
4.09
14.91
4.29
15.11
30.12
38.00
30.30
38.23
11.68
8.92
12.22
9.60
0.76
12.60
0.84
12.85
25.15
1.98
25.42
2.13
4.95
26.54
5.97
26.90
3.94
4.72
4.42
4.85
24.59
-0.05
25.07
0.1
Inches
Min. Max.
1.240
0.307
1.255
0.323
0.161
0.161
0.169
0.169
0.161
0.587
0.169
0.595
1.186
1.496
1.193
1.505
0.460
0.351
0.481
0.378
0.030
0.496
0.033
0.506
0.990
0.078
1.001
0.084
0.195
1.045
0.235
1.059
0.155
0.186
0.174
0.191
0.968
-0.002
0.987
0.004
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025







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