55N50F

HiPerRFTM IXFN 55N50F Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions D G SS Maximum Ratings V DSS V DGR VGS VGSM I D25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg T J = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 500 V 500 V ±20 V ±30 V 55 A 220 A 55 A 60 mJ 3.0 J 10 V/ns 600 -55 ... +150 150 -55 ... +150 W °C °C °C TJ VISOL Md 1.6 mm (0.63 in) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque - °C 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 g Symbol V DSS VGH(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) ...