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D2485 Dataheets PDF



Part Number D2485
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SD2485
Datasheet D2485 DatasheetD2485 Datasheet (PDF)

2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features • Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA) • Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www.DataSheet4U.com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak)* PC Tj Tstg Ratings 80 80 6 .

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2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features • Low saturation voltage VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA) • Large current capacitance IC = 2 A 1. Emitter 2. Collector 3. Base 3 2 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current www.DataSheet4U.com Collector peak current Symbol VCBO VCEO VEBO IC ic(peak)* PC Tj Tstg Ratings 80 80 6 2 3 0.9 150 –55 to +150 Unit V V V A A W °C °C ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— Collector power dissipation Junction temperature Storage temperature Note: * PW ≤ 10 ms, duty cycle ≤20 % ——————————————————————————————————————————— ——————————————————————————————————————————— ——————————————————————————————————————————— 2SD2485 Table 2 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector to base cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Min 80 Typ — Max — Unit V Test conditions IC = 10 µA, IE = 0 IC = 1 mA, RBE = ∞ IE = 10 µA IC = 0 VCB = 65 V, IE = 0 VCE = 65 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5 A V IC =1 A IB = 50 mA IC =1 A IB = 50 mA ——————————————————————————————————————————— ——————————————————————————————————————————— 80 — — V ——————————————————————————————————————————— 6 — — V ——————————————————————————————————————————— — — 1.0 µA ——————————————————————————————————————————— Collector to emitter cutoff current ICEO Emitter to base cutoff current IEBO hFE1 hFE2 VCE(sat) VBE(sat) — — 5.0 µA ——————————————————————————————————————————— — — 1.0 µA ——————————————————————————————————————————— DC current transfer ratio 120 — 300 ——————————————————————————————————————————— DC current transfer ratio 40 — — ——————————————————————————————————————————— Collector to emitter saturation voltage Base to emitter saturation voltage www.DataSheet4U.com — 0.1 0.2 ——————————————————————————————————————————— — — 1.2 V ——————————————————————————————————————————— 2SD2485 Maximum Collector Power Dissipation Curve 1.6 Collector Power Dissipation Pc (W) I C (A) Area of Safe Operation 10 3 ic(peak) PW = 1m 10 m 1.2 1 I C(max) 0.3 0.1 0.03 0.01 0.003 s DC Collector Current Op s 0.8 er at ion 0.4 0 0.001 Ta = 25 °C 1 shot pulse 50 100 150 Ambient Temperature Ta (°C) 200 0.1 0.3 1 3 10 30 100 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 2.0 20 mA mA 18 mA 16 A 14 m A 12 m A 10 m 8 mA Pc 6 mA DC Current Transfer Ratio vs. Collector Current 1000 h FE I C (A) 1.6 Collector Current 1.2 DC Current Transfer Ratio www.DataSheet4U.com 300 75 °C 25 °C = 0. 9 W 100 Ta = –25 °C 0.8 4 mA 0.4 Tc = 25 °C 2 mA 30 Pulse test VCE = 2 V 0.01 0.03 0.1 0.3 1 3 IB=0 10 0.003 0 0.4 0.8 1.2 1.6 2.0 Collector to Emitter Voltage V CE (V) Collector Current I C (A) 2SD2485 Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) 3 1 10 Collector to Emitter Saturation Voltage vs. Base Current Pulse test Ta = 25 °C Ta=–25°C VBE(sat) 75°C 75°C V CE(sat) Ta=–25°C Pulse test I C = 20 I B 25°C 3 1 0.3 0.1 25°C 0.3 0.1 I C= 2 A 1A 0.5 A 0.03 0.01 0.03 0.01 1 3 10 30 100 300 1000 0.003 0.003 0.01 0.03 0.1 0.3 1 3 Collector Current I C (A) Base Current I B (mA) 1000 300 www.DataSheet4U.com 100 30 10 Collector Output Capacitancet Cob (pF) Gain Bandwidth Product vs. Collector Current Gain Bandwidth Product f T (MHz) Collector Output Capacitance vs. Collector to Base Voltage 100 30 10 3 1 0.03 Pulse test VCE = 2 V Ta = 25 °C 3 IE =0 f = 1 MHz Ta = 25 °C 1 3 10 30 100 1 Collector to Base Voltage VCB (V) 0.01 0.3 0.1 0.3 1 3 Collector Current I C (A) 2SD2485 Typical Transfer Characteristics 2.0 I C (A) Collector Current 1.6 1.2 0.8 Pulse test VCE = 2 V Ta = 25 °C 0.2 0.4 0.6 0.8 1.0 0.4 0 Base to Emitter Voltage V BE (V) www.DataSheet4U.com .


AXIOM40S D2485 2SD2485


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