Epitaxial Transistor. 2SD2485 Datasheet

2SD2485 Transistor. Datasheet pdf. Equivalent


Part 2SD2485
Description Silicon NPN Epitaxial Transistor
Feature 2SD2485 Silicon NPN Epitaxial Application Low frequency power amplifier TO-92MOD. Features • Low .
Manufacture Hitachi Semiconductor
Datasheet
Download 2SD2485 Datasheet


2SD2485 Silicon NPN Epitaxial Application Low frequency pow 2SD2485 Datasheet
Recommendation Recommendation Datasheet 2SD2485 Datasheet




2SD2485
2SD2485
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Features
• Low saturation voltage
VCE(sat) = 0.1 V typ. (at IC = 1 A, IB = 50 mA)
• Large current capacitance
IC = 2 A
TO-92MOD.
32 1
1. Emitter
2. Collector
3. Base
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
VCBO
80
V
———————————————————————————————————————————
Collector to emitter voltage
VCEO
80
V
———————————————————————————————————————————
Emitter to base voltage
VEBO
6
V
———————————————————————————————————————————
Collector current
IC 2 A
———————————————————————————————————————————
www.DataSheet4UC.oclolemctor peak current
ic(peak)*
3
A
———————————————————————————————————————————
Collector power dissipation
PC
0.9 W
———————————————————————————————————————————
Junction temperature
Tj 150 °C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: * PW 10 ms, duty cycle 20 %



2SD2485
2SD2485
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min Typ Max Unit Test conditions
———————————————————————————————————————————
Collector to base breakdown V(BR)CBO
80
——
V IC = 10 µA,
voltage
IE = 0
———————————————————————————————————————————
Collector to emitter breakdown V(BR)CEO
80
——
V IC = 1 mA,
voltage
RBE =
———————————————————————————————————————————
Emitter to base breakdown
V(BR)EBO
6
——
V IE = 10 µA
voltage
IC = 0
———————————————————————————————————————————
Collector to base cutoff current ICBO
— 1.0
µA VCB = 65 V,
IE = 0
———————————————————————————————————————————
Collector to emitter cutoff current ICEO
— 5.0
µA VCE = 65 V,
RBE =
———————————————————————————————————————————
Emitter to base cutoff current IEBO
— 1.0
µA VEB = 5 V,
IC = 0
———————————————————————————————————————————
DC current transfer ratio
hFE1
120 — 300
VCE = 2 V,
IC = 0.5 A
———————————————————————————————————————————
DC current transfer ratio
hFE2
40 — —
VCE = 2 V,
IC = 1.5 A
———————————————————————————————————————————
Collector to emitter saturation VCE(sat) — 0.1 0.2 V IC =1 A
voltage
IB = 50 mA
———————————————————————————————————————————
Base to emitter saturation
VBE(sat) — — 1.2 V IC =1 A
voltage
IB = 50 mA
———————————————————————————————————————————
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