MP4T243

Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features Low Phase Noise Oscillator Transistor 200 mW Driv er Amplifier Transistor Operation to 8 GHz Av ailable as Chip Av ailable in Hermetic Surface Mount Packages Description The MP4T24300 series of high fT NPN medium power bipolar transistors are designed for usage in oscillators to 8 GHz and for moderate power driv er amplifiers through 3 GHz with noise figure below 4 dB. This industry standard transistor is av ailable as a chip for hybrid oscillator circuits or in hermetic ceramic packages for military usage. The chip and hermetic packages may be screened to JANTXV equiv alent lev els. The MP4T243 transistors utilize sub-micron photolithography and locos oxidation techniques to minimize parasitic capacitances. It also reduces shot noise enabling improv ed low noise characteristics. These transistors use a high temperature refractory barrier/gold metalization process. The MP4T243 transistor is emitter ballasted using ion implanted polysilicon resistors to prev ent emitter current hot spots at high current operation. www.DataSheet4U.com MP4T243 Series V3.00 Case Styles Chip Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 1 Tel (408) 432-1480 Fax (408)) 432-3440 Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Absolute M...