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MP4TD0370

M-pulse Microwave

Silicon Bipolar MMIC Cascadable Amplifier

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to ...


M-pulse Microwave

MP4TD0370

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Description
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features Cascadable 50Ω Gain Block 3dB Bandwidth: DC to 2.0 GHz 12.0 dB Typical Gain @ 1.0 GHz Unconditionally Stable (k>1) Hermetic Gold-Ceramic Microstrip Package Tape and Reel Packaging Available .040 1,02 4 GND MP4TD0370 RF INPUT 1 RF OUT AND BIAS 3 .020 0,51 Description M-Pulse's MP4TD0370 is a high performance silicon bipolar MMIC housed in a hermetic high reliability package for surface mount usage. The MP4TD0370 is useful where a general purpose 50Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0370 is fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. TYPICAL POWER GAIN vs FREQUENCY 14 12 Id=35m A 10 GAIN (dB) 8 6 4 2 Gain Flat to D C 0 0.01 2 GND .004 ±.002 0,1 ±0,05 .070 1,78 .035 0,89 .495 ±.030 12,57 ±0,76 Notes: (unless otherwise specified) 1. Dimensions are in / mm 2. Tolerance: in .xxx = ±.005; mm .xx = ±.13 Pin Configuration Pin Number 1 2&4 3 Pin Description RF Input AC/DC Ground RF Output and DC Bias www.DataSheet4U.com 0.1 FR E QU E N C Y (G H z) 1 10 Gold-Ceramic Microstrip Package Outline1,2 Electrical Specifications @ TA = +25°C, Id = 35 mA, Z0 = 50Ω Symbol Parameters Test Conditions 2 Gp Power Gain (⏐S21⏐ ) f = 0.1 GHz Gain Flatness f = 0.1 to 1.6 GHz ΔGp f3 dB 3 dB B...




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