MP4TD1100

M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features High Dynamic Range Cascadable 50Ω/75Ω Gain Block 3dB Bandwidth: 50 MHz to 1.0 GHz 17.5 dBm Typical P1dB @ 0.7 Ghz 11 dB Typical Gain @ 0.5 GHz 3.5 dB Typical Noise Figure @ 1.0 GHz RF Input MP4TD1100 Chip Outline Drawing1,2,3,4 Description M-Pulse's MP4TD1100 is a high performance silicon bipolar MMIC chip. The MP4TD1100 is designed for use in 50Ω or 75Ω systems where a high dynamic range gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD1100 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. Feedback Capacitor Ground Optional RF Output & +5.5 Volts 375 µ (14.8 mil) 375 µ (14.8 mil) 14 12 10 GAIN (dB) 8 6 4 TYPICAL POWER GAIN vs FREQUENCY Notes: (unless otherwise specified) 1. Chip Thickness is 120 µ m; 4.8 mils 2. Bond Pads are 40 µ m; 1.6 mils typical in diameter 3. Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance:µ m .xx = ±.13; mil .x = ±.5 Id=60mA Ordering Information Model No. MP4TD1100G MP4TD1100W Type of Carrier GEL PACK Waffle Pack www.DataSheet4U.com 2 0 0.1 1 FREQUENCY (GHz) 10 Electrical Specifications @ T A = +25°C, Id = 60 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp f = 0.1 GHz Power Gain (S212) Gain Flatness f = 0.1 to 0.7 GHz ...