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2SC3042. C3042 Datasheet

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2SC3042. C3042 Datasheet






C3042 2SC3042. Datasheet pdf. Equivalent




C3042 2SC3042. Datasheet pdf. Equivalent





Part

C3042

Description

2SC3042



Feature


Ordering number:EN938B NPN Triple Diffu sed Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applicatio ns Features · High breakdown voltage ( VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:m m 2022A [2SC3042] Specifications Absol ute Maximum Ratings at Ta = 25˚C Param eter Collector-to-Base Voltage Collecto r-to-Emitter Voltage Emi.
Manufacture

Sanyo Semiconductor Corporation

Datasheet
Download C3042 Datasheet


Sanyo Semiconductor Corporation C3042

C3042; tter-to-Base Voltage Collector Current C ollector Current (Pulse) Base Current C ollector Dissipation Symbol VCBO VCEO V EBO IC ICP IB PC Tc=25˚C PW≤300µs, Duty Cycle≤10% 1 : Base 2 : Collecto r 3 : Emitter SANYO : TO-3PB Condition s Ratings 500 400 7 12 25 4 2.5 100 15 0 –55 to +150 Unit V V V A A A W W C ˚C www.DataSheet4U.com Junction T emperature Storage Temperatu.


Sanyo Semiconductor Corporation C3042

re Tj Tstg Electrical Characteristics at Ta = 25˚C Parameter Collector Cutof f Current Emitter Cutoff Current DC Cur rent Gain Collector-to-Emitter Saturati on Voltage Base-to-Emitter Saturation V oltage Symbol ICBO IEBO hFE1 hFE2 VCE(s at) VBE(sat) VCB=400V, IE=0 VEB=5V, IC= 0 VCE=5V, IC=1.6A VCE=5V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A 15* 8 1.0 1.5 V V Conditions Rating.


Sanyo Semiconductor Corporation C3042

s min typ max 10 10 50* Unit µA µA * : The hFE1 of the 2SC3042 is classified as follows. When specifying the hFE1 r ank, specify two ranks or more in princ iple. 15 L 30 20 M 40 30 N 50 Any and all SANYO products described or contain ed herein do not have specifications th at can handle applications that require extremely high levels of reliability, such as life-support.

Part

C3042

Description

2SC3042



Feature


Ordering number:EN938B NPN Triple Diffu sed Planar Silicon Transistor 2SC3042 400V/12A Switching Regulator Applicatio ns Features · High breakdown voltage ( VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:m m 2022A [2SC3042] Specifications Absol ute Maximum Ratings at Ta = 25˚C Param eter Collector-to-Base Voltage Collecto r-to-Emitter Voltage Emi.
Manufacture

Sanyo Semiconductor Corporation

Datasheet
Download C3042 Datasheet




 C3042
Ordering number:EN938B
NPN Triple Diffused Planar Silicon Transistor
2SC3042
400V/12A Switching Regulator Applications
Features
· High breakdown voltage (VCBO500V).
· Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm
2022A
[2SC3042]
Specifications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
www.DataSheet4U.com
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
PW300µs, Duty Cycle10%
Tc=25˚C
500
400
7
12
25
4
2.5
100
150
Storage Temperature
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ max
Collector Cutoff Current
ICBO VCB=400V, IE=0
Emitter Cutoff Current
DC Current Gain
IEBO
hFE1
hFE2
VEB=5V, IC=0
VCE=5V, IC=1.6A
VCE=5V, IC=8A
15*
8
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=8A, IB=1.6A
Base-to-Emitter Saturation Voltage
VBE(sat) IC=8A, IB=1.6A
* : The hFE1 of the 2SC3042 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15 L 30 20 M 40 30 N 50
10
10
50*
1.0
1.5
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Unit
µA
µA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/4147KI/3095MW, TS No.938–1/4




 C3042
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
2SC3042
Symbol
Conditions
fT
Cob
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEO(sus)
VCEX(sus)1
VCEX(sus)2
ton
tstg
tf
VCE=10V, IC=1.6A
VCB=10V, f=1MHz
IC=1mA, IE=0
IC=10mA, RBE=
IE=1mA, IC=0
IC=12A, IB=2.4A, L=50µH
IC=12A, IB1=2.4A, L=200µH, IB2=–2.4A, clamped
IC=3A, IB1=0.6A, L=200µH, IB2=–0.6A, clamped
IC=10A, IB1=2A, IB2=–2A, RL=20, VCC=200V
IC=10A, IB1=2A, IB2=–2A, RL=20, VCC=200V
IC=10A, IB1=2A, IB2=–2A, RL=20, VCC=200V
Ratings
min typ
20
160
500
400
7
400
400
450
max
1.0
2.5
1.0
Unit
MHz
pF
V
V
V
V
V
V
µs
µs
µs
Switching Time Test Circuit
www.DataSheet4U.com
No.938–2/4




 C3042
2SC3042
www.DataSheet4U.com
No.938–3/4



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