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STS2601 Datasheet, Equivalent, Effect Transistor.

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor

 

 

 

Part STS2601
Description P-Channel Enhancement Mode Field Effect Transistor
Feature STS2601 S a mHop Microelectronics C orp.
Ver 1.
0 P-Channel Enhancement Mode F ield Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense c ell design for low R DS(ON).
Rugged and reliable.
SOT-26 package.
ID -4.
0A R DS(ON) (m Ω) Max 80 @ VGS=-4.
5V 110 @ VGS=-2.
5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXI MUM RATINGS ( T A=25 °C unless otherwi se noted ) Symbol VDS VGS Parameter Dra in-Source Voltage Gate-Source Voltage a ID www.
DataSheet4U.
com Drain Current- Continuous IDM PD TJ, TSTG -Pulsed b T A=25°C TA=70°C TA=25°C TA=70°C Lim it -20 ±12 -4.
0 -3.
2 .
Manufacture SamHop Microelectronics
Datasheet
Download STS2601 Datasheet
Part STS2601
Description P-Channel Enhancement Mode Field Effect Transistor
Feature STS2601 S a mHop Microelectronics C orp.
Ver 1.
0 P-Channel Enhancement Mode F ield Effect Transistor PRODUCT SUMMARY V DSS -20V FEATURES Super high dense c ell design for low R DS(ON).
Rugged and reliable.
SOT-26 package.
ID -4.
0A R DS(ON) (m Ω) Max 80 @ VGS=-4.
5V 110 @ VGS=-2.
5V SOT 26 Top View D D D G 1 2 3 6 5 4 D D S S G ABSOLUTE MAXI MUM RATINGS ( T A=25 °C unless otherwi se noted ) Symbol VDS VGS Parameter Dra in-Source Voltage Gate-Source Voltage a ID www.
DataSheet4U.
com Drain Current- Continuous IDM PD TJ, TSTG -Pulsed b T A=25°C TA=70°C TA=25°C TA=70°C Lim it -20 ±12 -4.
0 -3.
2 .
Manufacture SamHop Microelectronics
Datasheet
Download STS2601 Datasheet

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