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STS2621 Datasheet, Equivalent, Effect Transistor.Dual P -Channel Enhancement Mode Field Effect Transistor Dual P -Channel Enhancement Mode Field Effect Transistor |
| Part | STS2621 |
|---|---|
| Description | Dual P -Channel Enhancement Mode Field Effect Transistor |
| Feature | S T S 2621
S amHop Microelectronics C or p. J un. 6 2005 Dual P -C hannel E nha ncement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ). 130 @ V G S = -4. 5V 190 @ V G S = -2. 5V TS OP 6 Top View R ugged and reliable. S OT-26 P ackage. D1 D2 G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A =25 C unless otherwise noted) P aramete r Drain-S ource Voltage www. DataSheet4U . com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 - . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
| Part | STS2621 |
|---|---|
| Description | Dual P -Channel Enhancement Mode Field Effect Transistor |
| Feature | S T S 2621
S amHop Microelectronics C or p. J un. 6 2005 Dual P -C hannel E nha ncement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ). 130 @ V G S = -4. 5V 190 @ V G S = -2. 5V TS OP 6 Top View R ugged and reliable. S OT-26 P ackage. D1 D2 G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A =25 C unless otherwise noted) P aramete r Drain-S ource Voltage www. DataSheet4U . com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 - . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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