STS2621

S T S 2621 S amHop Microelectronics C orp. J un.6 2005 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ). 130 @ V G S = -4.5V 190 @ V G S = -2.5V TS OP 6 Top View R ugged and reliable. S OT-26 P ackage. D1 D2 G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage www.DataSheet4U.com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 -1.25 1 -55 to 150 Unit V V A A A W C Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 125 C /W 1 S T S 2621 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c S ymbol Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 10V, V DS = 0V V DS = V GS , ID =-250uA V GS = -4.5V, ID = -2.0A V GS = -2.5V, ID = -1.0A V DS = -5V, V GS = -4.5V V DS = -5V, ID = -2A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 115 175 -5 6 295 63 52 130 190 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS T...