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STS2621 Datasheet, Equivalent, Effect Transistor.

Dual P -Channel Enhancement Mode Field Effect Transistor

Dual P -Channel Enhancement Mode Field Effect Transistor

 

 

 

Part STS2621
Description Dual P -Channel Enhancement Mode Field Effect Transistor
Feature S T S 2621 S amHop Microelectronics C or p.
J un.
6 2005 Dual P -C hannel E nha ncement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ).
130 @ V G S = -4.
5V 190 @ V G S = -2.
5V TS OP 6 Top View R ugged and reliable.
S OT-26 P ackage.
D1 D2 G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A =25 C unless otherwise noted) P aramete r Drain-S ource Voltage www.
DataSheet4U .
com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 - .
Manufacture SamHop Microelectronics
Datasheet
Download STS2621 Datasheet
Part STS2621
Description Dual P -Channel Enhancement Mode Field Effect Transistor
Feature S T S 2621 S amHop Microelectronics C or p.
J un.
6 2005 Dual P -C hannel E nha ncement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -2A R DS (ON) S uper high dense cell design for low R DS (ON ).
130 @ V G S = -4.
5V 190 @ V G S = -2.
5V TS OP 6 Top View R ugged and reliable.
S OT-26 P ackage.
D1 D2 G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 ABS OLUTE MAXIMUM R ATINGS (T A =25 C unless otherwise noted) P aramete r Drain-S ource Voltage www.
DataSheet4U .
com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit -20 10 -2 -7 - .
Manufacture SamHop Microelectronics
Datasheet
Download STS2621 Datasheet

STS2621

STS2621
STS2621

STS2621

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