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STS2622 Datasheet, Equivalent, Effect Transistor.Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel Enhancement Mode Field Effect Transistor |
| Part | STS2622 |
|---|---|
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Feature | S T S 2622
S amHop Microelectronics C or p. F eb,25 2005 V er1. 1 Dual N-C hanne l E nhancement Mode Field E ffect Trans istor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2. 5A R D S (ON) S uper high dense cell design f or low R DS (ON ). 80 @ V G S = 4. 5V 1 10 @ V G S = 2. 5V R ugged and reliable . TS OP 6 package. D1 D2 TS OP 6 Top V iew G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATI NG (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www. D ataSheet4U. com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 1 . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
| Part | STS2622 |
|---|---|
| Description | Dual N-Channel Enhancement Mode Field Effect Transistor |
| Feature | S T S 2622
S amHop Microelectronics C or p. F eb,25 2005 V er1. 1 Dual N-C hanne l E nhancement Mode Field E ffect Trans istor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2. 5A R D S (ON) S uper high dense cell design f or low R DS (ON ). 80 @ V G S = 4. 5V 1 10 @ V G S = 2. 5V R ugged and reliable . TS OP 6 package. D1 D2 TS OP 6 Top V iew G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATI NG (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www. D ataSheet4U. com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 1 . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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