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STS2622 Datasheet, Equivalent, Effect Transistor.

Dual N-Channel Enhancement Mode Field Effect Transistor

Dual N-Channel Enhancement Mode Field Effect Transistor

 

 

 

Part STS2622
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature S T S 2622 S amHop Microelectronics C or p.
F eb,25 2005 V er1.
1 Dual N-C hanne l E nhancement Mode Field E ffect Trans istor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.
5A R D S (ON) S uper high dense cell design f or low R DS (ON ).
80 @ V G S = 4.
5V 1 10 @ V G S = 2.
5V R ugged and reliable .
TS OP 6 package.
D1 D2 TS OP 6 Top V iew G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATI NG (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www.
D ataSheet4U.
com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 1 .
Manufacture SamHop Microelectronics
Datasheet
Download STS2622 Datasheet
Part STS2622
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature S T S 2622 S amHop Microelectronics C or p.
F eb,25 2005 V er1.
1 Dual N-C hanne l E nhancement Mode Field E ffect Trans istor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( m W ) Max ID 2.
5A R D S (ON) S uper high dense cell design f or low R DS (ON ).
80 @ V G S = 4.
5V 1 10 @ V G S = 2.
5V R ugged and reliable .
TS OP 6 package.
D1 D2 TS OP 6 Top V iew G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 G2 S2 AB S OL UTE MAXIMUM R ATI NG (T A =25 C unles s otherwis e noted) P arameter Drain-S ource Voltage www.
D ataSheet4U.
com Gate-S ource Voltage S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 1 .
Manufacture SamHop Microelectronics
Datasheet
Download STS2622 Datasheet

STS2622

STS2622
STS2622

STS2622

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