WTL2602

WTL2602 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 3 GATE 1,2,5,6 DRAIN DRAIN CURRENT 6.3 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 4 SOURCE 1 6 5 4 2 3 SOT-26 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6.3 5 30 2 62.5 -55~+150 Unit V Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,2 A W ˚C/W ˚C Total Power Dissipation(TA=25˚C) Maximum Junction-ambient Operating Junction and Storage Temperature Range Device Marking WTL2602=2602 http:www.weitron.com.tw WEITRON 1/6 08-Sep-05 WTL2602 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250 μA Gate-Source Threshold Voltage VDS=VGS,ID=250 μA Gate-Source Leakage current VGS=±12V Drain-SourceLeakage Current(Tj=25˚C) VDS=20V,VGS=0 Drain-SourceLeakage Current(Tj=55˚C) VDS=16V,VGS=0 Drain-SourceOn-Resistance VGS=10V,I D=5.5A VGS=4.5V,I D=5.3A VGS=2.5V,ID=2.6A VGS=1.8V,I D=1.0A Forward Transconductance VDS=5V,I D=5.3A www.DataSheet4U.com BVDSS VGS(Th) IGSS 20 0.5 - - V ±100 1 μA 10 nA IDSS - RDS(on) - 13 30 34 50 90 - mΩ gfs S Dynamic Input Capacitance VGS=0V,VDS=15V,f=1.0MHz ...