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WTL2622 Datasheet, Equivalent, Mode MOSFET.Dual N-Channel Enhancement Mode MOSFET Dual N-Channel Enhancement Mode MOSFET |
| Part | WTL2622 |
|---|---|
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Feature | WTL2622
Dual N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
1 GATE 6 DRAIN
DRAIN CURRENT 2. 5 AMPERES DRAIN SOURC E VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4. 5V *Rugged and Re liable *Capable of 2. 5V Gate Drive *Sim ple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25 ˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Volta ge www. DataSheet4U. com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ± 10 2. 5 8 1. 25 1 125 -55~+150 Unit V C ontinuous Drain Curr . |
| Manufacture | Weitron Technology |
| Datasheet |
| Part | WTL2622 |
|---|---|
| Description | Dual N-Channel Enhancement Mode MOSFET |
| Feature | WTL2622
Dual N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
1 GATE 6 DRAIN
DRAIN CURRENT 2. 5 AMPERES DRAIN SOURC E VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4. 5V *Rugged and Re liable *Capable of 2. 5V Gate Drive *Sim ple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25 ˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Volta ge www. DataSheet4U. com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ± 10 2. 5 8 1. 25 1 125 -55~+150 Unit V C ontinuous Drain Curr . |
| Manufacture | Weitron Technology |
| Datasheet |
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