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WTL2622 Datasheet, Equivalent, Mode MOSFET.

Dual N-Channel Enhancement Mode MOSFET

Dual N-Channel Enhancement Mode MOSFET

 

 

 

Part WTL2622
Description Dual N-Channel Enhancement Mode MOSFET
Feature WTL2622 Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free 1 GATE 6 DRAIN DRAIN CURRENT 2.
5 AMPERES DRAIN SOURC E VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.
5V *Rugged and Re liable *Capable of 2.
5V Gate Drive *Sim ple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25 ˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Volta ge www.
DataSheet4U.
com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ± 10 2.
5 8 1.
25 1 125 -55~+150 Unit V C ontinuous Drain Curr .
Manufacture Weitron Technology
Datasheet
Download WTL2622 Datasheet
Part WTL2622
Description Dual N-Channel Enhancement Mode MOSFET
Feature WTL2622 Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free 1 GATE 6 DRAIN DRAIN CURRENT 2.
5 AMPERES DRAIN SOURC E VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.
5V *Rugged and Re liable *Capable of 2.
5V Gate Drive *Sim ple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25 ˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Volta ge www.
DataSheet4U.
com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ± 10 2.
5 8 1.
25 1 125 -55~+150 Unit V C ontinuous Drain Curr .
Manufacture Weitron Technology
Datasheet
Download WTL2622 Datasheet

WTL2622

WTL2622
WTL2622

WTL2622

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