WTL2622

WTL2622 Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free 1 GATE 6 DRAIN DRAIN CURRENT 2.5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ±10 2.5 8 1.25 1 125 -55~+150 Unit V Continuous Drain Current1, [email protected], TA=25˚C -Pulsed2 Drain-Source Diode Forward Current1 A W ˚C/W ˚C Total Power Dissipation1 (TA=25˚C) Maximum Junction-ambient1 Operating Junction and Storage Temperature Range Device Marking WTL2622=STS2622 http:www.weitron.com.tw WEITRON 1/6 19-Sep-05 WTL2622 Electrical Characteristics (TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ3 Max Unit OFF Characteristics Drain-Source Breakdown Voltage VGS=0,ID=250 μA Drain-SourceLeakage Current VDS=16V,VGS=0V Gate-Source Leakage current VGS=±10V, VDS=0V BVDSS IDSS IGSS 20 1 ±100 V μA nA ON Characteristics2 Gate-Source Threshold Voltage VDS=VGS,ID=250 μA Drain-SourceOn-Resistance VGS=4.5V,I D=2.5A VGS=2.5V,ID=2.0A On-State Drain Current VDS=5V,VGS=4.5V Forward Transconductance VDS=5V,I D=2.5A www.DataSheet4U.com VGS(Th) RDS(on) 0.5 6 - 0.8 65 90 7 1.5 80 110 - V mΩ ID(ON) gfs A S Dynamic Characteri...