Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon PNP epitaxial planar transistor
Unit: mm
For...
Transistors with built-in Resistor
UNR111x Series (UN111x Series)
Silicon
PNP epitaxial planar
transistor
Unit: mm
For digital circuits
(0.4)
6.9±0.1 (1.5) (1.5)
3.5±0.1
2.5±0.1 (1.0)
(1.0) 2.0±0.2 2.4±0.2
1.0±0.1
UNR1110 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR111D UNR111E UNR111F UNR111H UNR111L
(UN1110) (UN1111) (UN1112) (UN1113) (UN1114) (UN1115) (UN1116) (UN1117) (UN1118) (UN1119) (UN111D) (UN111E) (UN111F) (UN111H) (UN111L)
(R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ
(R2) 10 kΩ 22 kΩ 47 kΩ 47 kΩ 5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ
3 (2.5)
2 (2.5)
1
1.25±0.05
■ Resistance by Part Number
(0.85) 0.55±0.1
0.45±0.05
1: Base 2: Collector 3: Emitter M-A1 Package
Internal Connection
R1 B R2 E C
www.DataSheet4U.com
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −100 400 150 −55 to +150 Unit V V mA mW °C °C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003 SJH00001BED
4.1±0.2
Costs can be reduced through downsizing of the equipment and reduction of the number of parts M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the ...
