HMS12832M4 512KByte Datasheet

HMS12832M4 Datasheet PDF, Equivalent


Part Number

HMS12832M4

Description

SRAM MODULE 512KByte

Manufacture

Hanbit Electronics

Total Page 9 Pages
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HMS12832M4
HANBit
HMS12832M4
HAN
BI T
SRAM MODULE 512KByte (128K x 32-Bit)
Part No. HMS12832M4
GENERAL DESCRIPTION
The HMS12832M4 is a high-speed static random access memory (SRAM) module containing 131,072 words
organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-
sided, FR4-printed circuit board.
PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard
modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.
Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be
powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
Š Access times : 12, 15 and 20ns
Š High-density 512KByte design
Š High-reliability, high-speed design
Š Single + 5V ±0.5V power supply
Š Easy memory expansion with /CE and /OE functions
wwwŠ.DaAtalSl hinepetu4tUs.caonmd outputs are TTL-compatible
Š Industry-standard pinout
Š FR4-PCB design
OPTIONS MARKING
Š Timing
8ns access
10ns access
12ns access
15ns access
20ns access
Š Packages
64-pin SIMM
-8
-10
-12
-15
-20
M
Vss 1
PD0 2
PD1 3
DQ0 4
DQ8 5
DQ1 6
DQ9 7
DQ2 8
DQ10 9
DQ3 10
DQ11 11
Vcc 12
A0 13
A7 14
A1 15
A8 16
A2 17
A9 18
DQ12 19
DQ4 20
DQ13 21
DQ5 22
DQ14 23
DQ6 24
DQ15 25
DQ7 26
Vss 27
/WE 28
A15 29
A14 30
/CE2 31
/CE1 32
PIN ASSIGNMENT
/CE4 33
/CE3 34
NC 35
A16 36
/OE 37
Vss 38
DQ24 39
DQ16 40
DQ25 41
DQ17 42
DQ26 43
DQ18 44
DQ27 45
DQ19 46
A3 47
A10 48
A4 49
A11 50
A5 51
A12 52
Vcc 53
A13 54
A6 55
DQ20 56
DQ28 57
DQ21 58
DQ29 59
DQ22 60
DQ30 61
DQ23 62
DQ31 63
Vss 64
SIMM
TOP VIEW
PD0 = Open
PD1 = Open
1 HANBit Electronics Co.,Ltd.

HMS12832M4
HANBit
FUNCTIONAL BLOCK DIAGRAM
HMS12832M4
DQ0 - DQ31
A0 - A16
/CE1
/CE2
/CE3
www.DataSheet4U.com/WE
/OE
/CE4
TRUTH TABLE
32
17
A0-16
DQ 0-7
/WE
/OE U1
/CE
A0-16
DQ 8-15
/WE
/OE U2
/CE
A0-16
DQ16-23
/WE
/OE U3
/CE
A0-16
DQ24-31
/WE
/OE U4
/CE
PRESENCE-DETECT
PD0 = Open
PD1 = Open
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE /CE /WE
DQ
X H X HIGH-Z
H L H HIGH-Z
L L H Dout
X L L Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
2 HANBit Electronics Co.,Ltd.


Features HANBit HAN BIT HMS12832M4 SRAM MODULE 512KByte (128K x 32-Bit) Part No. HMS1 2832M4 GENERAL DESCRIPTION The HMS1283 2M4 is a high-speed static random acces s memory (SRAM) module containing 131,0 72 words organized in a x32-bit configu ration. The module consists of four 128 K x 8 SRAMs mounted on a 64-pin, single sided, FR4-printed circuit board. PD0 a nd PD1 identify the module’s density allowing interchangeable use of alterna te density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the m odule’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data i s written into the SRAM memory when wri te enable (/WE) and chip enable (/CE) i nputs are both LOW. Reading is accompli shed when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliab ility, this SRAM module is designed as multiple power and ground pin. All modu le components may be powered from a single +5V DC power supply and .
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