DatasheetsPDF.com

HMS12832M4G Dataheets PDF



Part Number HMS12832M4G
Manufacturers Hanbit Electronics
Logo Hanbit Electronics
Description SRAM MODULE 512KByte
Datasheet HMS12832M4G DatasheetHMS12832M4G Datasheet (PDF)

HANBit HMS12832M4G/Z4 SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP Part No. HMS12832M4G, HMS12832Z4 GENERAL DESCRIPTION The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board. PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Fo.

  HMS12832M4G   HMS12832M4G


Document
HANBit HMS12832M4G/Z4 SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP Part No. HMS12832M4G, HMS12832Z4 GENERAL DESCRIPTION The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board. PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +5V DC power supply and all inputs and outputs are fully TTL-compatible. Reading is FEATURES w Access times : 10, 12, 15 and 20ns w High-density 512KByte design w High-reliability, high-speed design w Single + 5V ±0.5V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pinout w FR4-PCB design www.DataSheet4U.com PIN ASSIGNMENT PIN 1 2 3 4 5 6 7 8 SYMBOL Vss NC NC DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 PIN 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 SYMBOL A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 PIN 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL /CE4 /CE3 NC A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 SYMBOL A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss OPTIONS MARKING w Timing 8ns access 10ns access 12ns access 15ns access 20ns access w Packages 64-pin SIMM 64-pin ZIP M Z - 8 -10 -12 -15 -20 9 10 11 12 13 14 15 16 SIMM TOP VIEW URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 1 HANBit Electronics Co.,Ltd. HANBit FUNCTIONAL BLOCK DIAGRAM 32 17 A0-16 /WE /OE /CE /CE1 A0-16 /WE /OE /CE /CE2 A0-16 /WE /OE /CE /CE3 A0-16 www.DataSheet4U.com HMS12832M4G/Z4 DQ0 - DQ31 A0 - A16 DQ 0-7 U1 DQ 8-15 U2 DQ16-23 U3 /WE /OE /WE /OE DQ24-31 U4 /CE PRESENCE-DETECT PD0 = Open PD1 = Open /CE4 TRUTH TABLE MODE STANDBY NOT SELECTED READ WRITE /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 2 HANBit Electronics Co.,Ltd. HANBit ABSOLUTE MAXIMUM RATINGS* PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature Operating Temperature SYMBOL VIN,OUT VCC PD TSTG TA HMS12832M4G/Z4 RATING -0.5V to Vcc+0.5V -0.5V to +7.0V 4.0W o -65 C to +150oC 0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * SYMBOL VCC VSS VIH VIL MIN 4.5V 0 2.2 -0.5* TYP. 5.0V 0 MAX 5.5V 0 Vcc+0.5V** 0.8V VIL(Min.) = -2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA ** VIH(Min.) = Vcc+2.0V ac (Pulse Width ≤ 10ns) for I ≤ 20 mA DC AND OPERATING CHARACTERISTICS (1)(0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 10% ) PARAMETER Input Leakage Current Output Leakage Current www.DataSheet4U.com Output High Voltage Output Low Voltage * Vcc=5.0V, Temp=25 oC TEST CONDITIONS VIN=Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC IOH = -4.0mA IOL = 8.0mA SYMBOL ILI IL0 VOH VOL MIN -8 -8 2.4 0.4 MAX 8 8 UNITS µA µA V V DC AND OPERATING CHARACTERISTICS (2) DESCRIPTION TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CE≥VCC-0.2V, VIN≥ VCC-0.2V or VIN≤0.2V ISB ISB1 120 20 120 20 120 20 mA mA ICC 300 292 280 mA SYMBOL MAX -12 -15 -20 UNIT Power Supply Current:Operating Power Supply Current:Standby URL: www.hbe.co.kr Rev. 1.0 (September / 2002) 3 HANBit Electronics Co.,Ltd. HANBit HMS12832M4G/Z4 CAPACITANCE (TA =25 oC , f= 1.0Mhz) DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN MAX 32 24 UNIT pF pF * NOTE : Capacitance is sampled and not 100% tested AC CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V, unless otherwise specified) Test conditions PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load VALUE 0V to 3V 3ns 1.5V See below Output Load (A) Output Load (B) for tHZ, tLZ, tWHZ,.


HMS12832M4 HMS12832M4G HMS12832Z4


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)