HMS12832M4V 512KByte Datasheet

HMS12832M4V Datasheet PDF, Equivalent


Part Number

HMS12832M4V

Description

SRAM MODULE 512KByte

Manufacture

Hanbit Electronics

Total Page 6 Pages
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HMS12832M4V
HANBit
HMS12832M4V
SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM
Part No. HMS12832M4V
GENERAL DESCRIPTION
The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in
a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit
board.
PD0 and PD1 identify the modules density allowing interchangeable use of alternate density, industry- standard modules. Four
chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the modules 4 bytes independently. Output enable(/OE)
and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Access times : 8, 10, 12, 15 and 20ns
w High-density 512KByte design
w High-reliability, high-speed design
w Single + 3.3V ±0.3V power supply
w Easy memory expansion with /CE and /OE functions
w All inputs and outputs are TTL-compatible
w Industry-standard pinout
w FR4-PCB design
wwwO.DaPtaTSIhOeeNt4US.com
w Timing
8ns access
10ns access
12ns access
15ns access
20ns access
w Packages
64-pin SIMM
MARKING
-8
-10
-12
-15
-20
M
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 17 A2 33 /CE4 49 A4
2 NC 18 A9 34 /CE3 50 A11
3 NC 19 DQ12 35 NC 51 A5
4 DQ0 20 DQ4 36 A16 52 A12
5 DQ8 21 DQ13 37 /OE 53 Vcc
6 DQ1 22 DQ5 38 Vss 54 A13
7 DQ9 23 DQ14 39 DQ24 55 A6
8 DQ2 24 DQ6 40 DQ16 56 DQ20
9 DQ10 25 DQ15 41 DQ25 57 DQ28
10 DQ3 26 DQ7 42 DQ17 58 DQ21
11 DQ11 27 Vss 43 DQ26 59 DQ29
12 Vcc 28 /WE 44 DQ18 60 DQ22
13 A0 29 A15 45 DQ27 61 DQ30
14 A7 30 A14 46 DQ19 62 DQ23
15 A1 31 /CE2 47 A3 63 DQ31
16 A8 32 /CE1 48 A10 64 Vss
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
1 HANBit Electronics Co.,Ltd.

HMS12832M4V
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ0 - DQ31
A0 - A16
32
17
/CE1
/CE2
/CE3
www.DataSheet4U.com /WE
/OE
/CE4
A0-16
DQ 0-7
/WE
/OE U1
/CE
A0-16
DQ 8-15
/WE
/OE U2
/CE
A0-16
DQ16-23
/WE
/OE U3
/CE
A0-16
DQ24-31
/WE
/OE U4
/CE
HMS12832M4V
PRESENCE-DETECT
PD0 = Open
PD1 = Open
TRUTH TABLE
MODE
STANDBY
NOT SELECTED
READ
WRITE
/OE /CE /WE
DQ
X H X HIGH-Z
H L H HIGH-Z
L L H Dout
X L L Din
POWER
STANDBY
ACTIVE
ACTIVE
ACTIVE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002).
2 HANBit Electronics Co.,Ltd.


Features HANBit HMS12832M4V SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM Part No. HMS12832M4V GENERAL DESCRIPTION Th e HMS12832M4V is a high-speed static ra ndom access memory (SRAM) module contai ning 131,072 words organized in a x32-b it configuration. The module consists o f four 128K x 8 SRAMs mounted on a 64-p in, single-sided, FR4-printed circuit b oard. PD0 and PD1 identify the module s density allowing interchangeable use of alternate density, industry- standa rd modules. Four chip enable inputs, (/ CE1, /CE2, /CE3 and /CE4) are used to e nable the module’s 4 bytes independen tly. Output enable(/OE) and write enabl e(/WE) can set the memory input and out put. Data is written into the SRAM memo ry when write enable (/WE) and chip ena ble (/CE) inputs are both LOW. accompli shed when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliab ility, this SRAM module is designed as multiple power and ground pin. All modu le components may be powered from a single +3.3V DC power supply an.
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