HMS12864F8V 1MByte Datasheet

HMS12864F8V Datasheet PDF, Equivalent


Part Number

HMS12864F8V

Description

SRAM MODULE 1MByte

Manufacture

Hanbit Electronics

Total Page 9 Pages
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HMS12864F8V
HANBit
HMS12864F8V
SRAM MODULE 1MByte (128K x 64 bit), 120-Pin SMM, 3.3V
Part No. HMS12864F8V
GENERAL DESCRIPTION
The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in
a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit
board.
Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the modules 8 bits
independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Access times : 12, 15 and 20ns
w High-density 1MByte design
w High-reliability, high-speed design
w Single + 3.3V ±0.3V power supply
w Easy memory expansion with /CE and
/OE functions
w All inputs and outputs are TTL-compatible
w Industry-standard pin-out
www.DwatFaSRh4e-ePtC4UB.cdoemsign
OPTIONS
MARKING
w Timing
8ns access
10ns access
12ns access
15ns access
20ns access
w Packages
120-pin SMM
-8
-10
-12
-15
-20
F
PIN ASSIGNMENT
P1 P2
PIN Symbol PIN Symbol PIN Symbol PIN Symbol
1 Vcc 31 Vss 1 Vcc 31 Vss
2 DQ32 32 DQ7 2 DQ24 32 DQ63
3 DQ33 33 DQ6 3 DQ25 33 DQ62
4 DQ34 34 DQ5 4 DQ26 34 DQ61
5 DQ35 35 DQ4 5 DQ27 35 DQ60
6 DQ36 36 DQ3 6 DQ28 36 DQ59
7 DQ37 37 DQ2 7 DQ29 37 DQ58
8 DQ38 38 DQ1 8 DQ30 38 DQ57
9 DQ39 39 DQ0 9 DQ31 39 DQ56
10 Vcc 40 Vss 10 Vcc 40 Vss
11 DQ40 41 DQ15 11 DQ16 41 DQ55
12 DQ41 42 DQ14 12 DQ17 42 DQ54
13 DQ42 43 DQ13 13 DQ18 43 DQ53
14 DQ43 44 DQ12 14 DQ19 44 DQ52
15 DQ44 45 DQ11 15 DQ20 45 DQ51
16 DQ45 46 DQ10 16 DQ21 46 DQ50
17 DQ46 47 DQ9 17 DQ22 47 DQ49
18 DQ47 48 DQ8 18 DQ23 48 DQ48
19 Vcc 49 Vss 19 Vcc 49 Vss
20 /WE0 50 A0 20 A16 50 NC
21 /WE1 51 A1 21 A15 51 NC
22 /WE2 52 A2 22 A14 52 /OE
23 /WE3 53 A3 23 A13 53 NC
24 /WE4 54 A4 24 A12 54 NC
25 Vcc 55 Vss 25 Vcc 55 Vss
26 /WE5 56 A5 26 A11 56 NC
27 /WE6 57 A6 27 A10 57 NC
28 /WE7 58 A7 28 A9 58 NC
29 NC 59 /CE 29 A8 59 NC
30 Vcc 60 Vss 30 Vcc 60 Vss
7 HANBit Electronics Co.,Ltd.

HMS12864F8V
HANBit
HMS12864F8V
FUNCTIONAL BLOCK DIAGRAM
DQ0 DQ63
A0 - A16
64
17
A0-16
DQ 0-7
/CE U1
/OE
/WE0
/WE
A0-16
DQ 8-15
/CE U2
/OE
/WE1
/WE
A0-16
DQ16-23
/CE U3
/OE
/WE2
/WE
/CS
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/OE
/WE3
A0-16
DQ24-31
/CE U4
/OE
/WE
A0-16
DQ 32-39
/CE U5
/OE
/WE
A0-16
DQ 40-47
/CE U6
/OE
A0-16 DQ48-55
/CE U7
/OE
/WE
A0-16
DQ56-63
/CE U8
/OE
/WE
/WE4
/WE5
/WE6
/WE7
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
Voltage on Any Pin Relative to Vss
VIN,OUT
-0.5V to 4.6V
Voltage on Vcc Supply Relative to Vss
VCC
-0.5V to 4.6V
Power Dissipation
PD 8.0W
Storage Temperature
TSTG
-65oC to +150oC
Operating Temperature
TA 0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
8 HANBit Electronics Co.,Ltd.


Features HANBit HMS12864F8V SRAM MODULE 1MByte ( 128K x 64 bit), 120-Pin SMM, 3.3V Part No. HMS12864F8V GENERAL DESCRIPTION Th e HMS12864F8V is a high-speed static ra ndom access memory (SRAM) module contai ning 131,072 words organized in a x 64- bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120 -pin, both-sided, FR4-printed circuit b oard. Byte write enable inputs,(/WE0,/W E1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are u sed to enable the module’s 8 bits ind ependently. Output enable(/OE) and writ e enable(/WE) can set the memory input and output. Data is written into the SR AM memory when write enable (/WE) and c hip enable (/CE) inputs are both LOW. a ccomplished when /WE remains HIGH and / CE and output enable (/OE) are LOW. For reliability, this SRAM module is desig ned as multiple power and ground pin. A ll module components may be powered fro m a single +3.3V DC power supply and al l inputs and outputs are fully TTL-comp atible. Reading is PIN ASSIGNMENT P1 P2 Symbol Vss DQ7 DQ6 DQ5 D.
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