HMS1M32M8L 4Mbyte Datasheet

HMS1M32M8L Datasheet PDF, Equivalent


Part Number

HMS1M32M8L

Description

SRAM MODULE 4Mbyte

Manufacture

Hanbit Electronics

Total Page 7 Pages
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Download HMS1M32M8L Datasheet PDF


HMS1M32M8L
HANBit
HMS1M32M8L
SRAM MODULE 4Mbyte(1Mx32Bit) ,LOW POWER,72Pin SIMM,5V
Part No. HMS1M32M8L, HMS1M32Z8L
GENERAL DESCRIPTION
The HMS1M32M8L is a static random access memory (SRAM) module containing 1,048,576 bits organized in a x32-bit
configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-pin, double-sided, FR4-printed circuit board.
The HMS1M32M8L also support low data retention voltage for battery back-up operations with low data retention current. Eight
chip enable inputs, (/CE_UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2, /CE_UM2, /CE_LM2, /CE_LL2) are used to enable
the modules 4M bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output.
Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is
accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.
For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from
a single +5V DC power supply and all inputs and outputs are fully TTL-compatible.
FEATURES
w Part identification
- HMS1M32M8L : SIMM design
- HMS1M32Z8L : ZIP design
The both are Pin to Pin Compatible
w Access times : 55ns, 70ns
w High-density 4MByte design
w High-reliability, low-power design
w Single + 5V ±0.5V power supply
w Low data retention voltage : 2V(min)
w Three state output and TTL-compatible
w FR4-PCB design
w Low profile 72-Pin SIMM
www.DataSheet4U.com
OPTIONS
w Timing
55ns access
70ns access
w Packages
72-pin SIMM
72-pin ZIP
MARKING
-55
-70
M
Z
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL
1 Vss 25 Vcc 49 DQ17
2 A3 26 DQ8 50 DQ18
3 A2 27 DQ9 51 DQ22
4 A1 28 DQ10 52 DQ21
5
A0
29 /CE_LM2 53
DQ20
6 Vcc 30 Vcc 54 DQ19
7 A11 31 /CE_LM1 55 Vcc
8 /OE 32 DQ15 56 A14
9 A10 33 DQ14 57 A12
10 Vcc 34 DQ13 58
A7
11 /CE_LL2 35
12 /CE_LL1 36
DQ12
DQ11
59
60
Vcc
A8
13 DQ7 37 A18 61
A9
14 DQ0 38 A16 62 DQ24
15 DQ1 39 Vss 63 DQ25
16 DQ2 40 A6 64 DQ26
17 DQ6 41 Vcc 65 /CE_UU2
18 DQ5 42 A5 66 /CE_UU1
19 DQ4 43 A4 67 DQ31
20 DQ3 44 Vcc 68 DQ30
21
A15
45 /CE_UM2 69
DQ29
22
A17
46 /CE_UM1 70
DQ28
23 /WE 47 DQ23 71 DQ27
24 A13 48 DQ16 72
Vss
SIMM
TOP VIEW
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
1 HANBit Electronics Co.,Ltd.

HMS1M32M8L
HANBit
FUNCTIONAL BLOCK DIAGRAM
DQ 0-DQ31
A0-A18
32
19
/CE-UU1
/CE-UM1
/CE-LM1
www.DataSheet4U.com
/OE
/CE-LL1
A0-18
DQ24-31
/WE
/OE U4
/CE
A0-18
DQ16-23
/WE
/OE U3
/CE
A0-18
DQ 8-15
/WE
/OE U2
/CE
A0-18
DQ 0-7
/WE
/OE U1
/CE
/CE-UU2
/CE-UM2
/CE-LM2
/WE
/OE
/CE-LL2
HMS1M32M8L
A0-18
DQ24-31
/WE
/OE U8
/CE
A0-18
DQ16-23
/WE
/OE U7
/CE
A0-18
DQ 8-15
/WE
/OE U6
/CE
A0-18
DQ 0-7
/WE
/OE U5
/CE
URL: www.hbe.co.kr
Rev. 1.0 (September / 2002)
2 HANBit Electronics Co.,Ltd.


Features HANBit HMS1M32M8L SRAM MODULE 4Mbyte(1M x32Bit) ,LOW POWER,72Pin SIMM,5V Part N o. HMS1M32M8L, HMS1M32Z8L GENERAL DESC RIPTION The HMS1M32M8L is a static rand om access memory (SRAM) module containi ng 1,048,576 bits organized in a x32-bi t configuration. The module consists of eight 512K x 8 SRAMs mounted on a 72-p in, double-sided, FR4-printed circuit b oard. The HMS1M32M8L also support low d ata retention voltage for battery back- up operations with low data retention c urrent. Eight chip enable inputs, (/CE_ UU1, /CE_UM1, /CE_LM1, /CE_LL1, /CE_UU2 , /CE_UM2, /CE_LM2, /CE_LL2) are used t o enable the module’s 4M bytes indepe ndently. Output enable(/OE) and write e nable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. acco mplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For re liability, this SRAM module is designed as multiple power and ground pin. All module components may be p.
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