HMS1M32M8V

HANBit HAN BIT HMS1M32M8V SRAM MODULE 4Mbyte(1M x 32-Bit) 3.3V Part No. HMS1M32M8V, HMS1M32Z8V GENERAL DESCRIPTION The HMS1M32M8V is a high-speed static random access memory (SRAM) module containing 1,048,576 words organized in a x32-bit configuration. The module consists of eight 1M x 4 SRAMs mounted on a 72-pin, doublesided, FR4-printed circuit board. PD0 to PD3 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Eight chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable (/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. Reading is accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully LVTTL-compatible. FEATURES Š Part identification - HMS1M32M8V : SIMM design - HMS1M32Z8V : ZIP design → Pin-Compatible with the HMS1M32M8V PIN ASSIGNMENT NC NC PD2 PD3 Vss PD0 PD1 DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 /CE4 /CE3 A17 A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 D...