Transistors
2SC5829
Silicon NPN epitaxial planar type
For high speed switching ■ Features
• Allowing the small current ...
Transistors
2SC5829
Silicon
NPN epitaxial planar type
For high speed switching ■ Features
Allowing the small current and low voltage operation High transition frequency fT Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
0.60±0.05
3 2
Unit: mm
1 1.00±0.05
0.39+0.01 −0.03
0.25±0.05
0.25±0.05 1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Rating 10 7 2 10 50 150 −55 to +150
Unit V V V mA mW °C °C
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
3
0.65±0.01
2 0.05±0.03
1: Base 2: Emitter 3: Collector ML3-N2 Package
Marking Symbol: X
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) www.DataSheet4U.com Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) Forward transfer gain Maximum unilateral power gain Noise figure Symbol ICBO IEBO hFE fT Cob S21e2 GUM NF Conditions VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz 100 4 0.4 6 15 3.5 Min Typ ...