Type Transistor. 2SC5820 Datasheet

2SC5820 Transistor. Datasheet pdf. Equivalent


Part 2SC5820
Description Silicon NPN Epitaxial Type Transistor
Feature 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 (Previ.
Manufacture Renesas Technology
Datasheet
Download 2SC5820 Datasheet


2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Ampli 2SC5820 Datasheet
Recommendation Recommendation Datasheet 2SC5820 Datasheet




2SC5820
2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Application
High gain bandwidth product
fT = 20 GHz typ.
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
Note: Marking is “WU–“.
3
1
4
REJ03G0758-0200
(Previous ADE-208-1604A)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
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Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
12
4.0
1.5
35
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 10



2SC5820
2SC5820
Electrical Characteristics
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
3rd. Order Intercept Point
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
ICBO   1 µA VCB = 12 V, IE = 0
ICEO   1 µA VCE = 4 V, RBE =
IEBO   10 µA VEB = 1.5 V, IC = 0
hFE
70 110 150
VCE = 2 V, IC = 20 mA
Cob 0.3 0.6 pF VCB = 2 V, IE = 0, f = 1 MHz
fT 17 20 GHz VCE = 2 V, IC = 30 mA
f = 2 GHz
PG
13 17.5
dB VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
NF
1.15 1.7
dB VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
IP3 10 dBm VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
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Rev.2.00 Aug 10, 2005 page 2 of 10







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