2SC5820 Transistor Datasheet

2SC5820 Datasheet PDF, Equivalent


Part Number

2SC5820

Description

Silicon NPN Epitaxial Type Transistor

Manufacture

Renesas Technology

Total Page 11 Pages
PDF Download
Download 2SC5820 Datasheet PDF


2SC5820
2SC5820
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Application
High gain bandwidth product
fT = 20 GHz typ.
High power gain and low noise figure;
PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
Note: Marking is “WU–“.
3
1
4
REJ03G0758-0200
(Previous ADE-208-1604A)
Rev.2.00
Aug.10.2005
1. Emitter
2. Collector
3. Emitter
4. Base
Absolute Maximum Ratings
Item
Collector to base voltage
Collector to emitter voltage
www.DataSheet4U.com
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Ratings
12
4.0
1.5
35
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
Rev.2.00 Aug 10, 2005 page 1 of 10

2SC5820
2SC5820
Electrical Characteristics
Item
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Noise figure
3rd. Order Intercept Point
(Ta = 25°C)
Symbol Min Typ Max Unit
Test conditions
ICBO   1 µA VCB = 12 V, IE = 0
ICEO   1 µA VCE = 4 V, RBE =
IEBO   10 µA VEB = 1.5 V, IC = 0
hFE
70 110 150
VCE = 2 V, IC = 20 mA
Cob 0.3 0.6 pF VCB = 2 V, IE = 0, f = 1 MHz
fT 17 20 GHz VCE = 2 V, IC = 30 mA
f = 2 GHz
PG
13 17.5
dB VCE = 2 V, IC = 30 mA,
f = 1.8 GHz
NF
1.15 1.7
dB VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
IP3 10 dBm VCE = 2 V, IC = 5 mA,
f = 1.8 GHz
www.DataSheet4U.com
Rev.2.00 Aug 10, 2005 page 2 of 10


Features 2SC5820 Silicon NPN Epitaxial High Frequ ency Low Noise Amplifier / Oscillator R EJ03G0758-0200 (Previous ADE-208-1604A) Rev.2.00 Aug.10.2005 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 d B typ. at f = 1.8 GHz Outline RENESAS Package code: PTSP0004ZA-A (Package nam e: CMPAK-4) 2 3 4 1 1. Emitter 2. Colle ctor 3. Emitter 4. Base Note: Marking is “WU–“. Absolute Maximum Rati ngs (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage w ww.DataSheet4U.com Emitter to base volt age Collector current Collector power d issipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC P c Tj Tstg Ratings 12 4.0 1.5 35 100 150 –55 to +150 Unit V V V mA mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 10 2 SC5820 Electrical Characteristics (Ta = 25°C) Item Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth .
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