2SC5826 transistor Datasheet

2SC5826 Datasheet PDF, Equivalent


Part Number

2SC5826

Description

Power transistor

Manufacture

Rohm

Total Page 4 Pages
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2SC5826
Transistors
Power transistor (60V, 3A)
2SC5826
2SC5826
zFeatures
1) High speed switching.
(Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 0.2mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2073
zApplications
Low frequency amplifier
High speed switching
zExternal dimensions (Unit : mm)
ATV
6.8 2.5
0.65Max.
(1) Emitter
(2) Collector
(3) Base
0.5
(1) (2) (3)
2.54 2.54
1.05
Symbol : C5826
0.45
zStructure
NPN Silicon epitaxial planar transistor
zPackaging specifications
Type
Package
Code
2SC5826
www.DataSheet4U.com
Basic ordering unit (pieces)
Taping
TV2
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
DC
Pulsed
IC
ICP
Power dissipation
PC
Junction temperature
Tj
Range of storage temperature
Pw=100ms
Tstg
Limits
60
60
6
3
6
1.0
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
1/3

2SC5826
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time
Storage time
Ton
Tstg
Fall time
Tf
1 Non repetitive pulse
2 See Switching charactaristics measurement circuits
Min.
60
60
6
120
Typ.
200
200
20
50
150
30
Max.
1.0
1.0
500
390
Unit
V
V
V
µA
µA
mV
MHz
pF
ns
ns
ns
Condition
IC=1mA
IC=100µA
IE=100µA
VCB=40V
VEB=4V
IC=2A
IB=0.2A
VCE=2V
IC=100mA
VCE=10V
IE= −100mA
f=10MHz
VCB=10V
IE=0mA
f=1MHz
IC=3A
IB1=300mA
IB2= −300mA
VCC 25V
2SC5826
1
1
2
zhFE RANK
Q
120270
R
180390
zElectrical characteristic curves
10
100ms
10ms
1 1ms
0.1
www.DataSheet4U.com
DC
0.01
Single
non repetitive
0.001 Pulsed
0.01 0.1
1
10 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Ta=25°C
1000
Tstg
Ton
100 Tf
Ta=25°C
VCC=25V
IC / IB=10 / 1
10
0.01 0.1 1 10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC / IB=10 / 1
1000
100 Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
10
Ta=25°C
100
VCE=5V
VCE=3V
VCE=2V
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
0.01
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3


Features 2SC5826 Transistors Power transistor (6 0V, 3A) 2SC5826 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3 A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load. 4) Compleme nts the 2SA2073 zExternal dimensions (U nit : mm) ATV 6.8 2.5 0.65Max. 1.0 0. 5 2.54 2.54 0.9 (1) (2) (3) (1) Emitt er (2) Collector (3) Base 1.05 14.5 4.4 0.45 Symbol : C5826 zApplication s Low frequency amplifier High speed sw itching zStructure NPN Silicon epitaxi al planar transistor zPackaging specif ications Package Type Taping TV2 2500 Code Basic ordering unit (pieces) 2SC 5826 www.DataSheet4U.com zAbsolute max imum ratings (Ta=25°C) Parameter Symbo l VCBO VCEO VEBO DC IC ICP PC Limits 60 60 6 3 6 1.0 150 −55 to 150 Unit V V V A A W °C °C ∗ Collector-base vo ltage Collector-emitter voltage Emitter -base voltage Collector current Power d issipation Junction temperature Range of storage temperature ∗Pw=100ms.
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