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P10NB20FP Dataheets PDF



Part Number P10NB20FP
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STP10NB20FP
Datasheet P10NB20FP DatasheetP10NB20FP Datasheet (PDF)

STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP10NB20 STP10NB20F P s s s s s V DSS 200 V 200 V R DS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6 A TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip l.

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STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP10NB20 STP10NB20F P s s s s s V DSS 200 V 200 V R DS(on) < 0.40 Ω < 0.40 Ω ID 10 A 6 A TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot dv/dt( 1) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junction T emperature o o TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value ST P10NB20 STP10NB20FP 200 200 ± 30 10 6 40 85 0.68 5.5 2000 -65 to 150 150 (1) ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V 6 4 40 30 0.24 5.5 A A A W W/ C V/ns V o o o C C 1/9 ( •) Pulse width limited by safe operating area November 1997 STP10NB20/FP THERMAL DATA TO-220 R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max 1.47 62.5 0.5 300 T O220FP 4.17 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 10 150 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µ A V GS = 0 Min. 200 1 10 ± 100 Typ . Max. Un it V µA µA nA Zero G ate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 oC ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate Threshold Voltage V DS = VGS Test Cond ition s ID = 250 µ A ID = 5 A 10 Min. 3 Typ . 4 0.30 Max. 5 0.40 Un it V Ω A www.DataSheet4U.com Resistance Static Drain-source On V GS = 10V On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V DYNAMIC Symb ol g fs ( ∗ ) C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse T ransfer Capacitance Test Cond ition s V DS > I D(on) x R DS(on) max V DS = 25 V f = 1 MHz I D =5 A VGS = 0 Min. 3 Typ . 4 470 135 22 650 190 30 Max. Un it S pF pF pF 2/9 STP10NB20/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Cond ition s V DD = 100 V I D = 5 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) V DD = 160 V I D = 10 A VGS = 10 V Min. Typ . 10 15 17 7.5 5.5 Max. 14 20 24 Un it ns ns nC nC nC SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s V DD = 160 V I D = 10 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 5) Min. Typ . 8 10 20 Max. 11 14 28 Un it ns ns ns SOURCE DRAIN DIODE Symb ol I SD I SDM (• ) V SD ( ∗ ) t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =10 A VGS = 0 170 980 11.5 I SD =10 A di/dt = 100 A/µ s o Tj = 150 C V DD = 50 V (see test circuit, figure 5) Test Cond ition s Min. Typ . Max. 10 40 1.5 Un it A A V ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area www.DataSheet4U.com Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 STP10NB20/FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP Output Characteristics Transfer Characteristics www.DataSheet4U.com Transconductance Static Drain-source On Resistance 4/9 STP10NB20/FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature www.DataSheet4U.com Source-drain Diode Forward Characteristics 5/9 STP10NB20/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Time.


D1395 P10NB20FP AT52SC1283J


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