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P10NB20FP Datasheet, Equivalent, STP10NB20FP.STP10NB20FP STP10NB20FP |
 
 
 
Part | P10NB20FP |
---|---|
Description | STP10NB20FP |
Feature | STP10NB20 STP10NB20FP
N - CHANNEL ENHANC EMENT MODE PowerMESHâ„¢ MOSFET
TYPE STP 10NB20 STP10NB20F P
s s s s s
V DSS 20 0 V 200 V
R DS(on) < 0. 40 Ω < 0. 40 â „¦ ID 10 A 6 A TYPICAL RDS(on) = 0. 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 % AVALANCHE TESTED VERY LOW INTRINSIC C APACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest hi gh voltage MESH OVERLAYâ„¢ process, SGS -Thomson has designed an advanced famil y of power MOSFETs with outstanding per formances. The new patent pending strip layout coupled with the Company’s pr oprietary edge termination structure, g ives the lowest RDS(on) pe . |
Manufacture | STMicroelectronics |
Datasheet |
Part | P10NB20FP |
---|---|
Description | STP10NB20FP |
Feature | STP10NB20 STP10NB20FP
N - CHANNEL ENHANC EMENT MODE PowerMESHâ„¢ MOSFET
TYPE STP 10NB20 STP10NB20F P
s s s s s
V DSS 20 0 V 200 V
R DS(on) < 0. 40 Ω < 0. 40 â „¦ ID 10 A 6 A TYPICAL RDS(on) = 0. 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 % AVALANCHE TESTED VERY LOW INTRINSIC C APACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest hi gh voltage MESH OVERLAYâ„¢ process, SGS -Thomson has designed an advanced famil y of power MOSFETs with outstanding per formances. The new patent pending strip layout coupled with the Company’s pr oprietary edge termination structure, g ives the lowest RDS(on) pe . |
Manufacture | STMicroelectronics |
Datasheet |
 
 
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