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P10NB20FP Datasheet, Equivalent, STP10NB20FP.

STP10NB20FP

STP10NB20FP

 

 

 

Part P10NB20FP
Description STP10NB20FP
Feature STP10NB20 STP10NB20FP N - CHANNEL ENHANC EMENT MODE PowerMESH™ MOSFET TYPE STP 10NB20 STP10NB20F P s s s s s V DSS 20 0 V 200 V R DS(on) < 0.
40 Ω < 0.
40 ID 10 A 6 A TYPICAL RDS(on) = 0.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 % AVALANCHE TESTED VERY LOW INTRINSIC C APACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest hi gh voltage MESH OVERLAY™ process, SGS -Thomson has designed an advanced famil y of power MOSFETs with outstanding per formances.
The new patent pending strip layout coupled with the Company’s pr oprietary edge termination structure, g ives the lowest RDS(on) pe .
Manufacture STMicroelectronics
Datasheet
Download P10NB20FP Datasheet
Part P10NB20FP
Description STP10NB20FP
Feature STP10NB20 STP10NB20FP N - CHANNEL ENHANC EMENT MODE PowerMESH™ MOSFET TYPE STP 10NB20 STP10NB20F P s s s s s V DSS 20 0 V 200 V R DS(on) < 0.
40 Ω < 0.
40 ID 10 A 6 A TYPICAL RDS(on) = 0.
3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100 % AVALANCHE TESTED VERY LOW INTRINSIC C APACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION Using the latest hi gh voltage MESH OVERLAY™ process, SGS -Thomson has designed an advanced famil y of power MOSFETs with outstanding per formances.
The new patent pending strip layout coupled with the Company’s pr oprietary edge termination structure, g ives the lowest RDS(on) pe .
Manufacture STMicroelectronics
Datasheet
Download P10NB20FP Datasheet

P10NB20FP

P10NB20FP
P10NB20FP

P10NB20FP

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