JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KSC2331
TO-92L
TRANSISTOR N...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate
Transistors
KSC2331
TO-92L
TRANSISTOR NPN
1.EMITTER
FEATURE Power dissipation PCM : 1 W Tamb=25 Collector current ICM : 0.7 A Collector-base voltage V(BR)CBO : 80 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current www.DataSheet4U.com DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency
2.COLLECTOR 3.BASE
Tamb=25
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob
unless
Test Ic= 100
otherwise
specified
MIN 80 60 8 0.1 0.1 40 240 0.7 1.2 8 30 V V pF MHz TYP MAX UNIT V V V A A
conditions A IE=0 IB=0 IC=0 IE=0 IC=0 IC= 50mA
IC= 10mA , IE= 10 A VCB=60V , VEB=5V , VCE=2 V,
IC= 500m A, IB= 50mA IC= 500 mA, IB= 50mA
(VCB=10V IE=0,f=1MHz) VCE= 10 V, IC= 50mA
fT
CLASSIFICATION OF hFE(1)
Rank Range R 40-80 O 70-140 Y 120-240
...