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EDD5116AGTA-4 Datasheet, Equivalent, DDR SDRAM.512M bits DDR SDRAM 512M bits DDR SDRAM |
| Part | EDD5116AGTA-4 |
|---|---|
| Description | 512M bits DDR SDRAM |
| Feature | DATA SHEET
512M bits DDR SDRAM
EDD5108A GTA-4 (64M words × 8 bits) EDD5116AGTA -4 (32M words × 16 bits)
Specification s
• Density: 512M bits • Organizati on ⎯ 16M words × 8 bits × 4 banks ( EDD5108AGTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AGTA) • Package: 66- pin plastic TSOP (II) ⎯ Lead-free (Ro HS compliant) • Power supply: VDD, VD DQ = 2. 5V ± 0. 125V • Data rate: 500M bps (max. ) • Four internal banks for concurrent operation • Interface: SST L_2 • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS L atency (CL): 3 • Precharge: auto prec harge option f . |
| Manufacture | Elpida Memory |
| Datasheet |
| Part | EDD5116AGTA-4 |
|---|---|
| Description | 512M bits DDR SDRAM |
| Feature | DATA SHEET
512M bits DDR SDRAM
EDD5108A GTA-4 (64M words × 8 bits) EDD5116AGTA -4 (32M words × 16 bits)
Specification s
• Density: 512M bits • Organizati on ⎯ 16M words × 8 bits × 4 banks ( EDD5108AGTA) ⎯ 8M words × 16 bits × 4 banks (EDD5116AGTA) • Package: 66- pin plastic TSOP (II) ⎯ Lead-free (Ro HS compliant) • Power supply: VDD, VD DQ = 2. 5V ± 0. 125V • Data rate: 500M bps (max. ) • Four internal banks for concurrent operation • Interface: SST L_2 • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS L atency (CL): 3 • Precharge: auto prec harge option f . |
| Manufacture | Elpida Memory |
| Datasheet |
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