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IXGQ20N120BD1
High Voltage IGBT
Description
High Voltage IGBT with Diode IXGQ 20N120B IXGQ 20N120BD1 VCES IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns BD1 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 Ω C...
IXYS Corporation
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