SHXXC760

Capsule Type Rectifier Diode SHXXC760 Symbol Characteristics Conditions TJ(0C) Value Unit BLOCKING PARAMETERS VRRM IRRM Repetitive peak reverse voltage Repetitive peak reverse current 180 180 200-600 25 V mA V = VRRM CONDUCTING PARAMETERS IF(AV) IRMS IFSM It 2 Average on-state current RMS on-state current Non repetitive peak surge onstate current Permissible surge energy Peak on-state voltage drop Typical forward conduction Threshold voltage Typical forward slope resistance MECHANICAL PARAMETERS 180 sine, 50H Z, TC = 1040C 760 1200 A A A kA2S V V mΩ Sine wave, 10mS without reverse voltage On-state current = 2000A 8500 180 361 180 180 180 1.39 0.70 0.30 VFM V0 r0 www.DataSheet4U.com THERMAL & R TH (J-C) RTH (C-HK) TJ TSTG F W Thermal impedance, 1800 conduction, Sine Thermal impedance Maximum Permissible junction temperature Storage temperature range Mounting Torque Weight Junction to case Case to heatsink 0.079 0.015 180 -40 – 180 6.5 70 0 C/W C/W 0 0 C C 0 KN gms HIND RECTIFIERS LTD 1 of 5 Capsule Type Rectifier Diode SHXXC760 All dimensions in mm On State Power Loss 1400 www.DataSheet4U.com 1200 1000 120 600 1800 Pt(av) - W 800 600 400 200 0 0 100 200 300 400 500 600 700 800 900 I t(av) - A HIND RECTIFIERS LTD 2 of 5 Capsule Type Rectifier Diode SHXXC760 Maximum Permissible Case Temp 180 160 140 Tcase (0C) 120 100 80 60 40 20 0 0 100 200 300 400 500 600 700 800 600 0 1200 180 I t(av) - A Max non repetitive Surge Current 90...