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EIB1011-2P Datasheet, Equivalent, Power FET.Internally Matched Power FET Internally Matched Power FET |
| Part | EIB1011-2P |
|---|---|
| Description | Internally Matched Power FET |
| Feature | Excelics
• • • • • • 10. 7-11 . 7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDA NCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP 3(46dBm TYPICAL) +33. 5/+33. 0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9. 5/8. 5d B TYPICAL G1dB POWER GAIN FOR EIA/EIB N ON-HERMETIC METAL FLANGE PACKAGE EIA/E IB1011-2P Not recommended for new desi gns. Contact factory. Effective 03/2003 10. 7-11. 7GHz, 2W Internally Matched Po wer FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-2P SYMBOLS PARAMETERS /TEST CONDITIONS Output Power at 1dB Co mpression f=10. 7-11. 7GHz Vds=8V, Idsq=0 . 5 Idss(EIA), 0. 6Idss(EIB) . |
| Manufacture | Excelics Semiconductor |
| Datasheet |
| Part | EIB1011-2P |
|---|---|
| Description | Internally Matched Power FET |
| Feature | Excelics
• • • • • • 10. 7-11 . 7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDA NCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP 3(46dBm TYPICAL) +33. 5/+33. 0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9. 5/8. 5d B TYPICAL G1dB POWER GAIN FOR EIA/EIB N ON-HERMETIC METAL FLANGE PACKAGE EIA/E IB1011-2P Not recommended for new desi gns. Contact factory. Effective 03/2003 10. 7-11. 7GHz, 2W Internally Matched Po wer FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1011-2P SYMBOLS PARAMETERS /TEST CONDITIONS Output Power at 1dB Co mpression f=10. 7-11. 7GHz Vds=8V, Idsq=0 . 5 Idss(EIA), 0. 6Idss(EIB) . |
| Manufacture | Excelics Semiconductor |
| Datasheet |
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