EIB1314-2P

Excelics 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 30% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1314-2P Not recommended for new designs. Contact factory. Effective 03/2003 13.75-14.5GHz, 2W Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1314-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100 rd EIB1314-2P MAX MIN 32 7 TYP 33.0 8 MAX UNIT dBm dB MIN 32.5 8 TYP 33.5 9 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 30 880 40 1440 1500 -1.0 -15 8 -2.5 1700 1100 25 850 46* 1360 700 -2.0 -15 8 o % mA dBm 1700 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.DataSheet4U.com Tstg Pt PARAMETERS Drain-Source Voltage Gate-...