EIB1718-2P

Excelics 17.7-18.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(46dBm TYPICAL) +33/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 6.0/5.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE EIA/EIB1718-2P Not recommended for new designs. Contact factory. Effective 03/2003 17.7-18.7GHz, Internally Matched Power FET ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718-2P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Drain Current at 1dB Compression Output 3 Order Intercept Point f=17.7-18.7GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=12mA -13 1100 rd EIB1718-2P MAX MIN 32.0 4.5 TYP 32.5 5.0 MAX UNIT dBm dB MIN 32.0 5.5 TYP 33.0 6.0 P1dB G1dB PAE Id1dB IP3 Idss Gm Vp BVgd Rth 25 880 40 1440 1500 -1.0 -15 8 -2.5 1700 1100 20 850 46* 1360 700 -2.0 -15 8 o % mA dBm 1700 mA mS -3.5 V V C/W Drain Breakdown Voltage Igd=4.8mA Thermal Resistance (Au-Sn Eutectic Attach) *Typical –45dBc IM3 at Pout=23dBm/Tone MAXIMUM RATINGS AT 25OC SYMBOLS Vds Vgs Ids Igsf Pin Tch www.DataSheet4U.com Tstg Pt PARAMETERS Drain-Source Voltage Gate-S...