2SF292200CYY CHIPS Datasheet

2SF292200CYY Datasheet PDF, Equivalent


Part Number

2SF292200CYY

Description

ULTRAFAST RECOVERY DIODE CHIPS

Manufacture

Silan Microelectronics

Total Page 1 Pages
Datasheet
Download 2SF292200CYY Datasheet


2SF292200CYY
2SF292200CYY
2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS
DESCRIPTION
Ø 2SF292200CYY is a ultrafast recovery diode chips
fabricated in silicon epitaxial planar technology;
Ø Ultrafast recovery times;
Ø High current capability;
Ø High surge current capability;
Ø Low forward voltage drop;
Ø Low reverse current leakage;
Ø Top metal is Ag, Back metal is Ag;
Ø Chip Size: 2920µm X 2920µm;
Ø Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size:2920 µm;
Lb: Pad Size: 2840 µm;
ORDERING SPECIFICATIONS
Product Name
2SF292200CYY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
www.DataSheMeta4xUim.coumm Repetitive Peak Reverse Voltage
Average Forward RectifiedCurrent@Tc=150°C
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
200
15
200
175
-55~175
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25 )
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Reverse recovery time
Symbol
VBR
VF
IR
Trr
Test Conditions
IR=50 A
IF=15A
VR=200V
IF=1A,di/dt=50A/ s
Min.
200
--
--
--
Max.
--
1.05
10
35
Unit
V
V
A
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.06.06
Page 1 of 1


Features 2SF292200CYY 2SF292200CYY ULTRAFAST RECO VERY DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø Ø 2SF292200CYY is a ultrafa st recovery diode chips fabricated in s ilicon epitaxial planar technology; Ult rafast recovery times; High current cap ability; High surge current capability; Low forward voltage drop; Low reverse current leakage; Top metal is Ag, Back metal is Ag; Chip Size: 2920µm X 2920 m; Chip Thickness: 280±20µm; Chip To pography and Dimensions La: Chip Size:2 920 µm; Lb: Pad Size: 2840 µm; Ø O RDERING SPECIFICATIONS Product Name 2SF 292200CYY Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage www.DataSheet4U.co m Average Forward RectifiedCurrent@Tc=1 50°C Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM I FAV IFSM TJ TSTG Ratings 200 15 200 175 -55~175 Unit V A A °C °C ELECTRICAL CHARACTERISTICS (Tamb=25 Parameters Reverse Voltage Forward Voltage Reverse Curr.
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