2SB1443 Transistor Datasheet

2SB1443 Datasheet PDF, Equivalent


Part Number

2SB1443

Description

Power Transistor

Manufacture

Guangdong Kexin Industrial

Total Page 1 Pages
Datasheet
Download 2SB1443 Datasheet


2SB1443
SMD Type
Power Transistor
2SB1443
Features
Low saturation voltage. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA.
Excellent DC current gain characteristics.
TransistIoCrs
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Collector-base voltage
VCBO
-50
Collector-emitter voltage
VCEO
-50
Emitter-base voltage
VEBO
-6
Collector current
IC
ICP *1
-2
-5
Collector dissipation
PC*2
1
Junction temperature
Tj 150
Storage temperature
Tstg -55 to +150
www.Data*S1hSeientg4lUe.pcuolmse Pw=10ms.
*2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
Testconditons
VCBO IC= -50ìA
VCEO IC= -1mA
VEBO IE= -50ìA
IcBO VCB= -50V
IEBO VEB= -5V
hFE VCE=-2V, IC= -0.5A
VCE(sat) IC/IB= -1A/ -50mA
Cob VCB= -10V, IE=0A, f=1MHz
fT VCE= -2V, IE=0.5A, f=100MHz
Min Typ Max Unit
-50 V
-50 V
-6 V
-0.1 A
-0.1 A
120 270
-0.15 -0.35 V
36 pF
200 MHz
www.kexin.com.cn 1


Features SMD Type Power Transistor 2SB1443 Trans istors IC Features Low saturation volt age. VCE (sat) = -0.35V (Max.) at IC / IB = -1A / -50mA. Excellent DC current gain characteristics. Absolute Maximum Ratings Ta = 25 Parameter Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Co llector dissipation Junction temperatur e Storage temperature www.DataSheet4U.c om *1 Single pulse Pw=10ms. Symbol VCB O VCEO VEBO IC ICP *1 PC*2 Tj Tstg Rat ing -50 -50 -6 -2 -5 1 150 -55 to +150 Unit V V V A A W *2 Printed circuit b oard 1.7mm thick, collector plating 1cm 2 or larger. Electrical Characteristic s Ta = 25 Parameter Collector-base brea kdown voltae Collector-emitter breakdow n voltage Emitter-base breakdown voltag e Collector cutoff current Emitter cuto ff current DC current gain Collector-em itter saturation voltage Output capacit ance Transition frequency Symbol VCBO V CEO VEBO IcBO IEBO hFE IC= -50ìA IC= - 1mA IE= -50ìA VCB= -50V VEB= -5V VCE=-2V, IC= -0.5A 120 Testcond.
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