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D2222 Datasheet, Equivalent, 2SD2222.2SD2222 2SD2222 |
| Part | D2222 |
|---|---|
| Description | 2SD2222 |
| Feature | Power Transistors
2SD2222
Silicon NPN t riple diffusion planar type Darlington
For power amplification Complementary t o 2SB1470
φ 3. 3±0. 2 5. 0±0. 3 3. 0 Uni t: mm 20. 0±0. 5 s Features q q q 6. 0 1. 5 1. 5 Solder Dip s Absolute Maxi mum Ratings Parameter Collector to base voltage Collector to emitter voltage E mitter to base voltage Peak collector c urrent Collector current Collector powe r TC=25°C dissipation Ta=25°C Junctio n temperature Storage temperature Symbo l VCBO VCEO VEBO ICP IC PC Tj Tstg 20. 0±0. 5 2. 5 2. 0±0. 3 3. 0±0. 3 1. 0±0. 2 (TC=25˚C) Ratings 160 160 5 15 8 150 3. 5 150 –55 to +150 Unit . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
| Part | D2222 |
|---|---|
| Description | 2SD2222 |
| Feature | Power Transistors
2SD2222
Silicon NPN t riple diffusion planar type Darlington
For power amplification Complementary t o 2SB1470
φ 3. 3±0. 2 5. 0±0. 3 3. 0 Uni t: mm 20. 0±0. 5 s Features q q q 6. 0 1. 5 1. 5 Solder Dip s Absolute Maxi mum Ratings Parameter Collector to base voltage Collector to emitter voltage E mitter to base voltage Peak collector c urrent Collector current Collector powe r TC=25°C dissipation Ta=25°C Junctio n temperature Storage temperature Symbo l VCBO VCEO VEBO ICP IC PC Tj Tstg 20. 0±0. 5 2. 5 2. 0±0. 3 3. 0±0. 3 1. 0±0. 2 (TC=25˚C) Ratings 160 160 5 15 8 150 3. 5 150 –55 to +150 Unit . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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