GaAs FET & HEMT Chips
FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0d...
Description
FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability
Source Gate
Drain
DESCRIPTION
The FLK027XP, and FLK027XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition
Source
Rating 15 -5
Unit V V W °C °C
Tc = 25°C
1.88 -65 to +175 175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
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Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth
Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 65mA VDS = 5V, IDS = 5mA IGS = -5µA
Min. -1.0 -5 23
Limit Typ. Max. 100 50 -2.0 24 150 -3.5 -
Unit mA mS V V dBm
Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Volta...
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