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FLK027XP Datasheet, Equivalent, HEMT Chips.GaAs FET & HEMT Chips GaAs FET & HEMT Chips |
| Part | FLK027XP |
|---|---|
| Description | GaAs FET & HEMT Chips |
| Feature | FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output P ower: P1dB = 24. 0dBm(Typ. ) High Gain: G 1dB = 7. 0dB(Typ. ) High PAE: ηadd = 32% (Typ. ) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FL K027XV chip is a power GaAs FET that is designed for general purpose applicati ons in the Ku-Band frequency range as i t provides superior power, gain, and ef ficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Tempe rature Ta=25°C) Item Drain-Source Volt age Gate-Source Voltage To . |
| Manufacture | Eudyna Devices |
| Datasheet |
| Part | FLK027XP |
|---|---|
| Description | GaAs FET & HEMT Chips |
| Feature | FLK027XP, FLK027XV
GaAs FET & HEMT Chips FEATURES
• • • • High Output P ower: P1dB = 24. 0dBm(Typ. ) High Gain: G 1dB = 7. 0dB(Typ. ) High PAE: ηadd = 32% (Typ. ) Proven Reliability Source Gate Drain DESCRIPTION The FLK027XP, and FL K027XV chip is a power GaAs FET that is designed for general purpose applicati ons in the Ku-Band frequency range as i t provides superior power, gain, and ef ficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Tempe rature Ta=25°C) Item Drain-Source Volt age Gate-Source Voltage To . |
| Manufacture | Eudyna Devices |
| Datasheet |
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