2SC3265 Transistor Datasheet

2SC3265 Datasheet PDF, Equivalent


Part Number

2SC3265

Description

Silicon NPN Epitaxial Transistor

Manufacture

Guangdong Kexin Industrial

Total Page 1 Pages
Datasheet
Download 2SC3265 Datasheet


2SC3265
SMD Type
TransistIoCrs
Silicon NPN Epitaxial
2SC3265
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
Features
High DC current gain: hFE (1) = 100320.
Low saturation voltage: VCE (sat) = 0.4 V (max)
(IC = 500 mA, IB = 20 mA).
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
25
5
800
160
200
150
-55 to +150
Unit
V
V
V
mA
mA
mW
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
ICBO VCB = 30 V, IE = 0
IEBO VEB = 50 V, IC = 0
V(BR) CEO IC = 10 mA, IB = 0
V(BR) EBO IE = 0.1 mA, IC = 0
hFE VCE = 1 V, IC = 100 mA
VCE (sat) IC = 500 mA, IB = 20 mA
VBE VCE = 1 V, IC = 10 mA
fT VCE = 5 V, IC = 10 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
0.1 ìA
0.1 ìA
25 V
5V
100 320
0.4 V
0.5 0.8 V
120 MHz
13 pF
hFE Classification
Marking
hFE
EO
100 200
EY
160 320
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Features SMD Type Silicon NPN Epitaxial 2SC3265 S OT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transi stors IC Unit: mm +0.1 2.4-0.1 Featu res High DC current gain: hFE (1) = 100 320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA) . +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1 .9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.col lector Absolute Maximum Ratings Ta = 2 5 Parameter Collector-base voltage Coll ector-emitter voltage Emitter-base volt age Collector current Base current Coll ector power dissipation Junction temper ature Storage temperature range www.Dat aSheet4U.com Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 5 800 160 2 00 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Pa rameter Collector cut-off current Emitt er cut-off current Collector-emitter br eakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitt er saturation voltage Base-emitter volt age Transition frequency Collector output capacitance Symbol IC.
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