KTC3265

KTC3265 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature Storage Temperature www.DataSheet4U.com Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 30 35 5.0 800 200 +150 -55 to +150 Unit V V V mA mW °C °C WEITRON http://www.weitron.com.tw 1/4 29-Aug-06 KTC3265 ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage IC = 10mA, I B = 0 Collector-Base Breakdown Voltage IC = 100µA, I E = 0 Emitter-Base Breakdown Voltage IE= 100µA, IC=0 Collector Cutoff Current VCB = 30V, I E = 0 Emitter Cutoff Current VEB = 5V, I C = 0 Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 30 35 Typ - Max - Unit V V 5.0 - - 0.1 0.1 V µA µA ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = 500mA, I B = 20mA Base-Emitter Saturation Voltage VCE = 1V, IC = 10mA DC Current Transfer Ration VCE = 1V, I C = 100mA www.DataSheet4U.com VCE(sat) - - 0.5 V VBE(ON) hFE 0.5 100 - 0.8 320 V SMALL-SIGNAL CHARACTERISTICS Transition Frequence VCE = 5V, IC =10mA, f = 100MHz Collector Output Capacitance VCB =10V, IE = 0, f = 1MHz fT C ob 120 13 MHz pF Classification of hFE Rank Range Marking O 100-200 EO Y 160-320 EY WEITRON http://www.weitron.com.tw 2/4 29-Aug-06 KTC3265 1k 800 600 400 200 0 6 5 COMMON EMITTER Ta=25°C 4 3 2 I B =1mA 0 COL L ECTOR CURRENT I C (mA ) 1...