IRLL110PBF

PD - 95222 IRLL110PbF HEXFET® Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on)Specified at VGS= 4V & 5V Fast Switching Lead-Free D VDSS = 100V RDS(on) = 0.54Ω G S ID = 1.5A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application. S O T -2 2 3 Absolute Maximum Ratings Parameter ID @ Tc = 25°C ID @ Tc = 100°C IDM PD @Tc = 25°C www.DataSheet4U.com PD @TA = 25°C Continuous Drain Current, VGS @ 5.0 V Continuous Drain Current, VGS @ 5.0 V Pulsed Drain Current  Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Junction and Storage Temperature Range Soldewring Temperature, for 10 seconds Max. 1.5 0.93 12 3.1 2..0 0.025 0.017 -/+10 50 1.5 0.31 5.5 -55 to + ...